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SS0503EC

更新时间： 2024-11-29 03:31:07
品牌 Logo 应用领域
三洋 - SANYO 二极管
页数 文件大小 规格书
3页 47K
描述
Low VF Schottky Barrier Diode 30V, 0.5A Rectifier

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中文翻译

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SS0503EC 技术参数

生命周期：Transferred零件包装代码：DFN
包装说明：R-PBCC-N2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.70风险等级：5.55
Is Samacsys：N其他特性：HIGH RELIABILITY
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.36 V
JESD-30 代码：R-PBCC-N2最大非重复峰值正向电流：5 A
元件数量：1端子数量：2
最高工作温度：125 °C最低工作温度：-55 °C
最大输出电流：0.5 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：CHIP CARRIER
认证状态：Not Qualified最大重复峰值反向电压：30 V
最大反向恢复时间：0.01 µs子类别：Rectifier Diodes
表面贴装：YES技术：SCHOTTKY
端子形式：NO LEAD端子位置：BOTTOM
Base Number Matches：1

SS0503EC 数据手册

 浏览型号SS0503EC的Datasheet PDF文件第2页浏览型号SS0503EC的Datasheet PDF文件第3页 
Ordering number : ENA0510  
SANYO Sem iconductors  
DATA S HEET  
Low V Schottky Barrier Diode  
F
SS0503EC  
30V, 0.5A Rectifier  
Applications  
•
High frequency rectification (switching regulators, converters, choppers).  
Features  
•
•
•
Low switching noise.  
Low leakage current and high reliability due to highly reliable planar structure.  
Ultraminiature (1008 size) and thin (0.6mm) leadless package.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Repetitive Peak Reverse Voltage  
Nonrepetitive Peak Reverse Surge Voltage  
Average Output Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
30  
30  
0.5  
5
RRM  
RSM  
V
V
I
O
A
Surge Forward Current  
I
50Hz sine wave, 1 cycle  
A
FSM  
Tj  
Junction Temperature  
--55 to +125  
--55 to +125  
°C  
°C  
Storage Temperature  
Tstg  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Reverse Voltage  
Symbol  
Conditions  
Unit  
min  
max  
V
I
=0.2mA  
R
30  
V
V
R
V 1  
F
I =0.1A  
0.31  
0.51  
0.36  
0.56  
100  
F
Forward Voltage  
V 2  
F
I =0.5A  
V
F
Reverse Current  
I
V
V
=15V  
R
R
µA  
pF  
ns  
R
Interterminal Capacitance  
Reverse Recovery Time  
C
=10V, f=1MHz  
6
t
rr  
I =I =100mA, See specified Test Circuit.  
Mounted in Cu-foiled area of 0.72mm2✕0.03mm  
10  
F R  
Therrmal Resistance  
Rth(j-a)  
70  
°C / W  
on glass epoxy board  
Marking : DB  
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before usingany SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
N1506SB TI IM TC-00000269 No. A0510-1/3  
123

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