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SROD-S PDF预览

SROD-S

更新时间: 2024-11-25 14:44:59
品牌 Logo 应用领域
固锝 - GOOD-ARK 功效光电二极管
页数 文件大小 规格书
2页 593K
描述
Rectifier Diode, 1 Phase, 1 Element, 1.5A, 200V V(RRM), Silicon, DO-214AC, SMAJ, 2 PIN

SROD-S 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMAJ, 2 PINReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.42应用:EFFICIENCY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.3 V
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
最大非重复峰值正向电流:50 A元件数量:1
相数:1端子数量:2
最高工作温度:125 °C最低工作温度:-55 °C
最大输出电流:1.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大重复峰值反向电压:200 V最大反向电流:5 µA
最大反向恢复时间:0.15 µs子类别:Rectifier Diodes
表面贴装:YES端子形式:C BEND
端子位置:DUALBase Number Matches:1

SROD-S 数据手册

 浏览型号SROD-S的Datasheet PDF文件第2页 
SROA-S thru SROM-S  
1.5 Amps. Fast Recovery Surface Mount Rectifiers  
Voltage Range 50 to 1000 Volts Forward Current 1.5 Amperes  
Features  
‹ For surface mounted application  
‹ Low profile package  
‹ Built-in strain relief, ideal for automated placement  
‹ Plastic material used carries Underwriters Laboratory  
Classification 94V-O  
‹ Fast switching for high efficiency  
‹ High temperature soldering:  
260oC/10 seconds at terminals  
Mechanical Data  
‹ Cases: New SMA molded plastic  
‹ Terminals: Solder plated solderable per MIL-STD-750,  
Method 2026  
‹ Polarity: Indicated by cathode band  
‹ Weight: 0.004 ounce, 0.113 gram  
Maximum Ratings and Electrical Characteristics  
Ratings at 25oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
Parameter  
Symbols  
SROA-S  
SROB-S  
SROD-S  
SROG-S  
SROJ-S  
SROK-S SROM-S  
Units  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
Volts  
Volts  
Volts  
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified current  
See Fig. 1  
IF(AV)  
1.5  
Amps  
Peak forward surge current, 8.3 ms single half sine-  
wave superimposed on rated load (JEDEC Method)  
IFSM  
VF  
IR  
50.0  
1.30  
Amps  
Volts  
uA  
Maximum instantaneous forward voltage @ 1.5A  
Maximum DC reverse current  
at rated DC blocking voltage  
@TA=25oC  
5.0  
200  
@TA=125oC  
nS  
pF  
Maximum reverse recovery time (Note 1)  
Typical junction capacitance (Note 2)  
trr  
150  
250  
500  
CJ  
50  
RθJA  
RθJL  
60.0  
20.0  
Typical thermal resistance (Note 3)  
oC/W  
Operating temperature range  
Storage temperature range  
TJ  
-55 to +125  
-55 to +150  
oC  
oC  
TSTG  
Notes:  
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
2. Measured at 1 MHz and Applied VR=4.0 Volts  
3. Thermal Resistance from Junction to Ambient and from Junction to Lead Mounted on P.C.B. with 0.27" x 0.27" ( 7.0 x 7.0 mm ) Copper Pad Areas.  
209  

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