SPD10N10

更新时间： 2024-11-29 22:07:55

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
8页	127K
描述
SIPMOS Power Transistor

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中文翻译

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数据手册

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SPD10N10 数据手册

Preliminary Data

SPD 10N10

SIPMOS Power Transistor

Product Summary

Features

Drain source voltage

100

0.2

• N channel

Drain-Source on-state resistance

Continuous drain current

Ω

• Enhancement mode

DS(on)

• Avalanche rated

• dv/dt rated

Pin 1 Pin 2 Pin 3

Type

Package

P-TO252

P-TO251

Ordering Code

Packaging

SPD10N10

SPU10N10

Q67040-S4119-A2 Tape and Reel

Q67040-S4111-A2 Tube

Maximum Ratings, at T = 25 ˚C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

T = 25 ˚C

T = 100 ˚C

6.3

Pulsed drain current

IDpulse

T = 25 ˚C

Avalanche energy, single pulse

I = 10 A, V = 25 V, R = 25 Ω

Avalanche energy, periodic limited by T

Reverse diode dv/dt

jmax

kV/µs

dv/dt

I = 10 A, V = 0 V, di/dt = 200 A/µs

Gate source voltage

Power dissipation

±20

tot

T = 25 ˚C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55... +175

55/150/56

˚C

T , T

stg

Data Sheet

05.99

12 3 4 5 6 7 8

中文翻译

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