生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-MSFM-P3 |
Reach Compliance Code: | unknown | 风险等级: | 5.39 |
配置: | SINGLE | 最小漏源击穿电压: | 900 V |
最大漏极电流 (ID): | 3 A | 最大漏源导通电阻: | 4.2 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-257 |
JESD-30 代码: | R-MSFM-P3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | METAL |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | PIN/PEG | 端子位置: | SINGLE |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SNF31042 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 1000V, 4.2ohm, 1-Element, N-Channel, Silicon, Meta | |
SNF340SLX | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 8.7A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Me | |
SNF340TP | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 8.7A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Me | |
SNF340VP | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 8.7A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Me | |
SNF401002SLP | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 60A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me | |
SNF401002TP | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 60A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me | |
SNF401002TX | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 60A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me | |
SNF401002VP | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 60A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Me | |
SNF402005SLP | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Met | |
SNF402005TX | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Met |