是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.59 |
其他特性: | RATED AC VOLTAGE (VAC): 63 | 电容: | 47 µF |
电容器类型: | FILM CAPACITOR | 介电材料: | POLYESTER |
高度: | 15 mm | 长度: | 17 mm |
安装特点: | SURFACE MOUNT | 负容差: | 20% |
端子数量: | 2 | 最高工作温度: | 105 °C |
最低工作温度: | -55 °C | 封装形状: | RECTANGULAR PACKAGE |
封装形式: | SMT | 包装方法: | BULK |
正容差: | 20% | 额定(AC)电压(URac): | 63 V |
额定(直流)电压(URdc): | 100 V | 系列: | JSN |
表面贴装: | YES | 端子形状: | J BEND |
宽度: | 42.9 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SNF12CA | SUNMATE |
获取价格 |
200W patch TVS transient suppression diode SOD-123 12V | |
SNF130SLP | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 11A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Met | |
SNF130SLX | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 11A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Met | |
SNF130TX | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 11A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Met | |
SNF130VP | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 11A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Met | |
SNF140TP | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 16A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Me | |
SNF140TX | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 16A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Me | |
SNF1423SLP | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta | |
SNF1423SLX | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta | |
SNF1423TP | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta |