Datasheet > SMT50-180

SMT50-180

更新时间： 2024-11-14 22:21:39

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
3页	223K
描述
ELECTRICAL CHARACTERISTICS

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中文翻译

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SMT50-180 数据手册

SMT50

ELECTRICAL CHARACTERISTICS

The electrical characteristics of a SMT50 device are similar to

that of a self-gated Triac, but the SMT50 is a two terminal

device with no gate. The gate function is achieved by an

internal current controlled mechanism.

device is reached (Ibo) which causes the device to switch to a

fully conductive state such that the voltage across the device

is now only a few volts (Vt). The voltage at which the device

switched from the avalanche mode to the fully conductive

state (Vt) is known as the Breakover voltage (Vbo). When the

device is in the Vt state, high currents can be diverted

without damage to the SMT50 due to the low voltage across

the device, since the limiting factor in such devices is

dissipated power (V x I).

Like the T.V.S. diodes, the SMT50 has a standoff voltage (Vrm)

which should be equal to or greater than the operating

voltage of the system to be protected. At this voltage (Vrm)

the current consumption of the SMT50 is negligible and will

not affect the protected system.

Resetting of the device to the non-conducting state is

controlled by the current flowing through the device. When

the current falls below a certain value, known as the Holding

Current (Ih), the device resets automatically.

When a transient occurs, the voltage across the SMT50 will

increase until the breakdown voltage (Vbr) is reached. At this

point the device will operate in a similar way to a T.V.S.

device and is in avalanche mode.

As with the avalanche T.V.S. device, if the SMT50 is subjected

to a surge current which is beyond its maximum rating, then

the device will fail in short circuit mode, ensuring that the

equipment is ultimately protected.

The voltage of the transient will now be limited and will only

increase by a few volts as the device diverts more current. As

this transient current rises, a level of current through the

SELECTING A SMT50

1. When selecting a SMT50 device, it is important that

the Vrm of the device is equal to or greater than the

the operating voltage of the system.

V-I Graph illustrating symbols

I_pp

and terms for the SMT50 surge

protection device.

I_BO

I_H

I_RM

2. The minimum Holding Current (Ih) must be greater

than the current the system is capable of delivering

otherwise the device will remain conducting following

a transient condition.

V_RM

V_BR

V_BO

V_R

COMPLIES WITH THE

PEAK SURGE

VOLTAGE

CURRENT

ADMISSIBLE

(A)

IPP

NECESSARY

RESISTOR

FOLLOWING STANDARDS

WAVEFORM

(V)

(µS)

(Ω)

(CCITT) ITU-K20

(CCITT) ITU-K17

VDE0433

1000

1500

2000

level 3

level 4

1500

800

10/700

1.2/50

10/700

1.2/500

10/160

10/560

9/720

5/310

1/20

100

VDE0878

IEC-1000-4-5

5/310

8/20

FCC Part 68, lightning surge

type A

10/160

10/560

5/320

12.5

6.5

FCC Part 68, lightning surge

type B

1000

Bellcore TR-NWT-001089

first level

2500

1000

5000

2/10

10/1000

2/10

10/1000

2/10

150

11.5

Bellcore TR-NWT-001089

second level

150

11.5

CNET

I31-24

1000

0.5/700

0.8/310

w w w. l i t t e l f u s e . c o m

12 3

中文翻译

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与SMT50-180相关器件

型号	品牌	获取价格	描述	数据表
SMT50-1A	FRONTIER	获取价格	Surface Mount Transformer/Inductor
SMT50-1A-LFR	FRONTIER	获取价格	Surface Mount Transformer/Inductor
SMT50-1M	FRONTIER	获取价格	General Purpose Inductor, 50uH, 2 Element, Kool-mu-Core, SMD
SMT50-1MA	FRONTIER	获取价格	Surface Mount Transformer/Inductor
SMT50-1MA-LFR	FRONTIER	获取价格	Surface Mount Transformer/Inductor
SMT50-2	FRONTIER	获取价格	General Purpose Inductor, 50uH, 2 Element, SMD
SMT50-200	LITTELFUSE	获取价格	ELECTRICAL CHARACTERISTICS
SMT50-220	LITTELFUSE	获取价格	ELECTRICAL CHARACTERISTICS
SMT50-240	LITTELFUSE	获取价格	ELECTRICAL CHARACTERISTICS
SMT50-270	LITTELFUSE	获取价格	ELECTRICAL CHARACTERISTICS

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