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SMPC9.0A-M3/86A PDF预览

SMPC9.0A-M3/86A

更新时间: 2024-11-01 19:54:43
品牌 Logo 应用领域
威世 - VISHAY 局域网光电二极管电视
页数 文件大小 规格书
5页 86K
描述
DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, TO-277A, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3, Transient Suppressor

SMPC9.0A-M3/86A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-277
包装说明:R-PDSO-F3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.55
最大击穿电压:11.1 V最小击穿电压:10 V
击穿电压标称值:10.55 V外壳连接:ANODE
最大钳位电压:15.4 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:TO-277AJESD-30 代码:R-PDSO-F3
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:1500 W元件数量:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:6.5 W认证状态:Not Qualified
最大重复峰值反向电压:9 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子面层:Matte Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

SMPC9.0A-M3/86A 数据手册

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SMPC5.0A thru SMPC36A  
Vishay General Semiconductor  
www.vishay.com  
®
Surface Mount TRANSZORB  
Transient Voltage Suppressors  
FEATURES  
eSMP® Series  
• Very low profile - typical height of 1.1 mm  
• Ideal for automated placement  
• Uni-direction only  
A
• Excellent clamping capability  
• Low incremental surge resistance  
• Very fast response time  
1
• Meets MSL level 1, per J-STD-020  
2
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
TO-277A (SMPC)  
Cathode 1  
Cathode 2  
A
Anode  
MECHANICAL DATA  
Case: TO-277A (SMPC)  
Molding compound meets UL 94 V-0 flammability rating  
PRIMARY CHARACTERISTICS  
Base P/N-M3  
-
halogen-free, RoHS-compliant, and  
VBR uni-directional  
6.40 V to 44.2 V  
5.0 V to 36 V  
1500 W  
commercial grade  
VWM  
PPPM  
PD  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 2 whisker test  
6.5 W  
IFSM  
200 A  
TJ max.  
Polarity  
Package  
150 °C  
Uni-directional  
TO-277A (SMPC)  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial and telecommunication. Sensitive  
equipment against transient overvoltages.  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VALUE  
1500  
UNIT  
W
(1)(2)  
Peak power dissipation with a 10/1000 μs waveform (fig. 3)  
Peak pulse current with a 10/1000 μs waveform (fig. 1)  
PPPM  
(1)  
IPPM  
See next table  
A
(2)  
Peak forward surge current 8.3 ms single half sine-wave  
Power dissipation on infinite heatsink, TA = 50 °C  
Maximum instandaneous forward voltage at 100 A  
IFSM  
200  
6.5  
3.5  
A
W
V
PD  
(3)  
VF  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum  
Pulse test: 300 µs pulse width, 1 % duty cyclet  
(2)  
(3)  
Revision: 20-Jan-14  
Document Number: 89116  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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