Datasheet > SMP550G-FN

SMP550G-FN

更新时间： 2024-11-28 09:18:43

品牌	Logo	应用领域
SEME-LAB		光电二极管光电二极管
页数	文件大小	规格书
2页	30K
描述
P.I.N. PHOTODIODE

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

SMP550G-FN 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Active	包装说明：	HERMETIC, METAL, TO-39, 3 PIN
Reach Compliance Code：	compliant	HTS代码：	8541.40.60.50
风险等级：	5	其他特性：	LOW NOISE
配置：	SINGLE	最大暗电源：	22 nA
红外线范围：	YES	功能数量：	1
最高工作温度：	70 °C	最低工作温度：	-40 °C
光电设备类型：	PIN PHOTODIODE	最小反向击穿电压：	60 V
形状：	ROUND	尺寸：	4.2 mm
Base Number Matches：	1

SMP550G-FN 数据手册

SMP550G-FN

MECHANICAL DATA

Dimensions in mm.

P.I.N. PHOTODIODE

FEATURES

• NARROW RECEIVING ANGLES

• PHOTODIODE ISOLATED FROM PACKAGE

• EXCELLENT LINEARITY

Ø 9.1

• LOW NOISE

• WIDE SPECTRAL RESPONSE

• WIDE INTRINSIC BANDWIDTH

• LOW LEAKAGE CURRENT

• LOW CAPACITANCE

Ø 0.45

Lead

• INTEGRAL OPTICAL FILTER OPTION note 1

• TO39 HERMETIC METAL CAN PACKAGE

• EMI SCREENING MESH AVAILABLE

5.08

Case

Note 1 Contact Semelab Plc for filter options

DESCRIPTION

Cathode

Anode

The SMP550G-FN is a Silicon P.I.N. photodiode

incorporated in a lensed, hermetic metal can package. The

electrical terminations are via two leads of diameter 0.018"

on a pitch centre diameter of 0.2". The photodiode is

electrically isolated from the package, which has a

separate earth lead.

The larger photodiode active area provides greater

sensitivity than the SMP400 range of devices, with a

corresponding reduction in speed. The photodiode

structure has been optimised for high sensitivity, light

measurement applications. The narrow viewing angles

provide better coupling to on-axis illumination sources. The

metal can, isolated photodiode and optional screening

mesh ensure a rugged device with a high degree of

immunity to conducted and radiated electrical interference.

TO-39 Package

Pin 1 – Anode

Pin 2 – Cathode

Pin 3 – Case

ABSOLUTE MAXIMUM RATINGS (T

Operating temperature range

= 25°C unless otherwise stated)

-40°C to +70°C

-45°C to +80°C

0.35% per °C

case

Storage temperature range

Temperature coefficient of responsively

Temperature coefficient of dark current

Reverse breakdown voltage

x2 per 8°C rise

60V

Prelim. 7/97

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

中文翻译

下载PDF

与SMP550G-FN相关器件

型号	品牌	获取价格	描述	数据表
SMP550G-X1	SEME-LAB	获取价格	P.I.N. PHOTODIODE
SMP550G-X2	SEME-LAB	获取价格	P.I.N. PHOTODIODE
SMP550G-X3	SEME-LAB	获取价格	P.I.N. PHOTODIODE
SMP550G-X4	SEME-LAB	获取价格	P.I.N. PHOTODIODE
SMP55-10-70.0M	PLETRONICS	获取价格	暂无描述
SMP55-10-FREQ4	PLETRONICS	获取价格	Parallel - Fundamental Quartz Crystal, 12MHz Min, 30MHz Max, SMD, 4 PIN
SMP5555	INTERFET	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236
SMP5556	INTERFET	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236
SMP5557	INTERFET	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236
SMP5558	INTERFET	获取价格	Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-236

与SMP550G-FN相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

48
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

38
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

66
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

62

产品中心

服务支持

精选活动

关于我们

帮助中心

SMP550G-FN

SMP550G-FN 技术参数

SMP550G-FN 数据手册

与SMP550G-FN相关器件

与SMP550G-FN相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SMP550G-FN

SMP550G-FN 技术参数

SMP550G-FN 数据手册

与SMP550G-FN相关器件

与SMP550G-FN相关文章

您还可以找

您在本页遇到什么问题？