是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | DO-214AB | 包装说明: | R-PDSO-C2 |
针数: | 2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.36 | Is Samacsys: | N |
最大击穿电压: | 81.5 V | 最小击穿电压: | 66.7 V |
击穿电压标称值: | 74.1 V | 最大钳位电压: | 107 V |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JEDEC-95代码: | DO-214AB |
JESD-30 代码: | R-PDSO-C2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 最大非重复峰值反向功率耗散: | 3000 W |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 175 °C | 最低工作温度: | -65 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性: | BIDIRECTIONAL | 最大功率耗散: | 1.61 W |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 60 V |
最大反向电流: | 5 µA | 子类别: | Transient Suppressors |
表面贴装: | YES | 技术: | AVALANCHE |
端子面层: | MATTE TIN | 端子形式: | C BEND |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SMLJ60CTRE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 60V V(RWM), Bidirectional, |
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SMLJ60E3TR | MICROSEMI |
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Trans Voltage Suppressor Diode, 3000W, 60V V(RWM), Unidirectional, 1 Element, Silicon, DO- |
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SMLJ60S05 | MCC |
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6 Amp Surface Mount Glass Passivated Rectifier 50 - 1000 Volts |
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SMLJ60S05-TP | MCC |
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Rectifier Diode, 1 Phase, 1 Element, 6A, 50V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, PL |
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SMLJ60S05-TP-HF | MCC |
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Rectifier Diode, 1 Phase, 1 Element, 6A, 50V V(RRM), Silicon, DO-214AB, SMC, 2 PIN |
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SMLJ60S1 | MCC |
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6 Amp Surface Mount Glass Passivated Rectifier 50 - 1000 Volts |
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SMLJ60S1 | SUNMATE |
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Rectifier device Common rectifier diodes |
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SMLJ60S10 | MCC |
获取价格 |
6 Amp Surface Mount Glass Passivated Rectifier 50 - 1000 Volts |
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SMLJ60S10 | SUNMATE |
获取价格 |
Rectifier device Common rectifier diodes |
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SMLJ60S10-T | MCC |
获取价格 |
Rectifier Diode, |
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