SMLJ54A-Q

更新时间： 2024-11-19 13:13:43

品牌	Logo	应用领域
伯恩斯 - BOURNS		瞬态抑制器二极管光电二极管局域网
页数	文件大小	规格书
5页	205K
描述
Trans Voltage Suppressor Diode,

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中文翻译

获取价格

技术参数
数据手册

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SMLJ54A-Q 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	not_compliant	Factory Lead Time：	15 weeks
风险等级：	5.7	JESD-609代码：	e3
湿度敏感等级：	1	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	Matte Tin (Sn)	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

SMLJ54A-Q 数据手册

Features

Applications

■ RoHS compliant*

■ IEC 61000-4-2 ESD (Min. Level 4)

■ IEC 61000-4-4 EFT

■ Surface Mount SMC package

■ Standoff Voltage: 5.0 to 170 volts

■ Power Dissipation: 3000 watts

■ IEC 61000-4-5 Surge

SMLJ Transient Voltage Suppressor Diode Series

General Information

The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop

increasingly smaller electronic components.

Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in compact chip package DO-214AB (SMC)

size format. The Transient Voltage Suppressor series offers a choice of Working Peak Reverse Voltage from 5 V up to 170 V and Breakdown

Voltage up to 200 V. Typical fast response times are less than 1.0 ns for unidirectional devices and less than 5.0 ns for bidirectional devices

from 0 V to Minimum Breakdown Voltage.

Bourns^®Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the ﬂat conﬁguration

minimizes roll away.

Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)

Parameter

Symbol

Value

Unit

(Note 1,2)

Minimum Peak Pulse Power Dissipation (T = 1 ms)

3000

Watts

Peak Forward Surge Current

8.3 ms Single Ha Sine Wave Superimposed on Rated Load

(JEDEC Method)

300

Amps

FSM

(Note 3)

Steady State Power Dissipation @ TL = 75 °C

5.0

Watts

Volts

M(AV)

Maximum Instantaneous Forward Voltage @ I = 100 A

(Note 5)

(For Unidirectional Units Only)

Operating Temperature Range

Storage Temperature Range

-55 to +150

-55 to +175

°C

STG

1. Non-repetitive current pulse, per Pulse Waveform graph and derated above T = 25 °C per Pulse Derating Curve.

2. Thermal Resistance Junction to Lead.

3. 8.3 ms Single Ha-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only).

4. Single Phase, Ha Wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20 %.

= 3.5 V on SMLJ5.0A through SMLJ90A and V = 5.0 V on SMLJ100A through SMLJ170A.

How to Order

SMLJ 5.0 CA

Package

SMLJ = SMC/DO-214AB

Working Peak Reverse Voltage

5.0 = 5.0 V

(Volts)

RWM

Sufﬁx

A = 5 % Tolerance Unidirectional Device

CA = 5 % Tolerance Bidirectional Device

Asia-Paciﬁc:

Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116

Europe:

Tel: +41-41 768 5555 • Fax: +41-41 768 5510

The Americas:

Tel: +1-951 781-5500 • Fax: +1-951 781-5700

www.bourns.com

*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.

Speciﬁcations are subject to change without notice.

Customers should verify actual device performance in their speciﬁc applications.

12 3 4 5

中文翻译

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与SMLJ54A-Q相关器件

型号	品牌	获取价格	描述	数据表
SMLJ54A-QH	BOURNS	获取价格	Trans Voltage Suppressor Diode,
SMLJ54A-TP	MCC	获取价格	Trans Voltage Suppressor Diode, 3000W, 54V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMLJ54C	MCC	获取价格	Transient Voltage Suppressor 5.0 to 170 Volts 3000 Watt
SMLJ54C	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 3000W, 54V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
SMLJ54CA	MCC	获取价格	Transient Voltage Suppressor 5.0 to 170 Volts 3000 Watt
SMLJ54CA	BOURNS	获取价格	SMLJ Transient Voltage Suppressor Diode Series
SMLJ54CA	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 3000W, 54V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
SMLJ54CAE3/TR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 3000W, 54V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
SMLJ54CA-H	BOURNS	获取价格	Trans Voltage Suppressor Diode, 3000W, 54V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
SMLJ54CAHE3-TP	MCC	获取价格	Trans Voltage Suppressor Diode,

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