Datasheet > SML300HB12

SML300HB12

更新时间： 2024-01-16 11:07:25

品牌	Logo	应用领域
SEME-LAB		半导体
页数	文件大小	规格书
7页	179K
描述
HIGH PERFORMANCE POWER SEMICONDUCTORS

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技术参数
数据手册

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SML300HB12 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.73	最大集电极电流 (IC)：	455 A
门极-发射极最大电压：	20 V	元件数量：	1
最高工作温度：	175 °C	最大功率耗散 (Abs)：	850 W
子类别：	Insulated Gate BIP Transistors	VCEsat-Max：	2.45 V
Base Number Matches：	1

SML300HB12 数据手册

SML300HB12

Attributes:

-aerospace build standard

-high reliability

-lightweight

-metal matrix base plate

-AlN isolation

-trench gate igbts

Maximum rated values/Electrical Properties

Collector-emitter Voltage

V_ce

1200

DC Collector Current

Tc=70C, Tvj=175C

Tc=25C,Tvj=175C

I_c, nom

300

440

Repetitive peak Collector Current

tp=1msec,Tc=80C

I_crm

600

Total Power Dissipation

Gate-emitter peak voltage

Tc=25C

P_tot

2380

V_ges

I_f

+/-20

300

DC Forward Diode

Current

Repetitive Peak

Forward Current

tp=1msec

I_frm

600

I²t value per diode

Vr=0V, tp=10msec,

Tvj=125C

I²

19000

2500

A²sec

Isolation voltage

RMS, 50Hz, t=1min

V_isol

Collector-emitter saturation

voltage

Ic=300A,Vge=15V, Tc=25C

Ic=300A,Vge=15V,Tc=125C

V_ce(sat)

1.7 2.15

2.0

Gate Threshold voltage

Input capacitance

Ic=4.8mA,Vce=Vge, Tvj=25C Vge_(th)5.0 5.8

6.5

f=1MHz,Tvj=25C,Vce=25V,

Vge=0V

C_ies

C_res

I_ces

0.85

Reverse transfer Capacitance f=1MHz,Tvj=25C,Vce=25V,

Vge=0V

Collector emitter cut off

current

Vce=1200V,Vge=0V,Tvj=25C

Gate emitter cut off current

Vce=0V,Vge=20V,Tvj=25C

I_ges

400

12 3 4 5 6 7

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