是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Not Recommended | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.14 | Is Samacsys: | N |
雪崩能效等级(Eas): | 1300 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 300 V | 最大漏极电流 (ID): | 40 A |
最大漏源导通电阻: | 0.085 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-247AD | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 160 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SML30B48 | SEME-LAB |
获取价格 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
SML30J130 | SEME-LAB |
获取价格 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
SML30J70 | SEME-LAB |
获取价格 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
SML30L76 | SEME-LAB |
获取价格 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
SML30SUZ12TC | SEME-LAB |
获取价格 |
Ultrafast Recovery Diode 1200 Volt, 2 x 30 Amp | |
SML31 | ROHM |
获取价格 |
High Brightness Type Mini-molded chip LEDs | |
SML31 | BOT |
获取价格 |
SURFACE MOUNT 3mm CIRCUIT BOARD INDICATOR | |
SML-31 | ROHM |
获取价格 |
Abundant color variations with diverse luminous intensity types | |
SML-310 | ROHM |
获取价格 |
Small, chip LEDs | |
SML310BAT | ROHM |
获取价格 |
Small,chip LEDs (Blue.Green) |