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SMK630F PDF预览

SMK630F

更新时间: 2024-11-25 09:18:59
品牌 Logo 应用领域
可天士 - KODENSHI /
页数 文件大小 规格书
8页 530K
描述
Advanced N-Ch Power MOSFET

SMK630F 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.72
Base Number Matches:1

SMK630F 数据手册

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SMK630F  
Advanced N-Ch Power MOSFET  
DC-DC CONVERTER APPLICATION  
HIGH VOLTAGE SWITCHING APPLICATIONS  
Features  
PIN Connection  
High Voltage : BVDSS=200V(Min.)  
Low Crss : Crss=24pF(Typ.)  
Low gate charge : Qg=12nC(Typ.)  
Low RDS(on) : RDS(on)=0.4Ω(Max.)  
D
S
G
Ordering Information  
Type No.  
Marking  
Package Code  
G
D
S
SMK630F  
SMK630  
TO-220F-3L  
TO-220F-3L  
Marking Diagram  
Column 1 : Manufacturer  
Column 2 : Production Information  
e.g.) GYMDD  
AUK  
GYMDD  
SMK630  
-. G : Factory management code  
-. YMDD : Date Code (year, month, date)  
Column 3 : Device Code  
Absolute maximum ratings (TC=25°C unless otherwise noted)  
Characteristic  
Symbol  
Rating  
200  
±30  
9
Unit  
V
Drain-source voltage  
VDSS  
Gate-source voltage  
Drain current (DC) *  
VGSS  
V
(Tc=25)  
A
ID  
(Tc=100)  
5.4  
36  
A
*
Drain current (Pulsed)  
Power dissipation  
IDM  
PD  
A
30  
W
A
Avalanche current (Single)  
Single pulsed avalanche energy  
Avalanche current (Repetitive)  
Repetitive avalanche energy  
Junction temperature  
IAS  
EAS  
IAR  
EAR  
TJ  
9
232  
9
mJ  
A
9.5  
150  
mJ  
°C  
Storage temperature range  
Tstg  
-55~150  
* Limited by maximum junction temperature  
Characteristic  
Symbol  
Typ.  
Max.  
4.16  
62.5  
Unit  
Junction-case  
Rth(J-C)  
Rth(J-A)  
-
-
Thermal  
resistance  
°C/W  
Junction-ambient  
KSD-T0O043-001  
1

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