Datasheet > SMK0260D

SMK0260D

更新时间： 2024-11-26 20:50:11

品牌	Logo	应用领域
可天士 - KODENSHI		/
页数	文件大小	规格书
8页	485K
描述
Transistor,

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中文翻译

获取价格

数据手册

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SMK0260D 数据手册

SMK0260D

Advanced N-Ch Power MOSFET

SWITCHING REGULATOR APPLICATIONS

Features

PIN Connection

• High Voltage : BV_DSS=600V(Min.)

• Low C_rss: C_rss=3.4pF(Typ.)

• Low gate charge : Qg=7.0nC(Typ.)

• Low R_DS(on): R_DS(on)=4.7Ω(Max.)

Ordering Information

Type No.

Marking

Package Code

SMK0260D

SMK0260

TO-252

Marking Diagram

SMK

0260

YWW

Column 1,2 : Device Code

Column 3 : Production Information

e.g.) YWW

-. YWW : Date Code (year, week)

Absolute maximum ratings (T_C=25°C unless otherwise noted)

Characteristic

Symbol

Rating

600

±30

2.0

Unit

Drain-source voltage

V_DSS

Gate-source voltage

Drain current (DC) ^*

V_GSS

(Tc=25℃)

I_D

(Tc=100℃)

1.35

8.0

Drain current (Pulsed)

Power dissipation

I_DM

P_D

Avalanche current (Single)

Single pulsed avalanche energy

Avalanche current (Repetitive)

Repetitive avalanche energy

Junction temperature

②

①

I_AS

E_AS

I_AR

E_AR

T_J

2.0

130

2.0

5.6

150

°C

Storage temperature range

T_stg

-55~150

* Limited by maximum junction temperature

Characteristic

Symbol

Typ.

Max.

Unit

Junction-case

R_th(J-C)

R_th(J-A)

2.6

Thermal

resistance

°C/W

Junction-ambient

62.5

KSD-T6O008-003

12 3 4 5 6 7 8

中文翻译

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