Datasheet > SMK0465IS

SMK0465IS

更新时间： 2024-09-28 12:03:27

品牌	Logo	应用领域
可天士 - KODENSHI		/
页数	文件大小	规格书
8页	486K
描述
SWWITCHINNGREGGULATOORAPPLICATIOON

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中文翻译

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数据手册

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SMK0465IS 数据手册

SMK0465IS

Advanced N-Ch Power MOSFET

SWITCHING REGULATOR APPLICATION

Features

• Drain-source breakdown voltage: BV_DSS=650V

• Low gate charge: Q_g=11.2nC (Typ.)

• Low drain-source On-resistance: R_DS(on)=3Ω (Max.)

• RoHS compliant device

• Halogen free package

Ordering Information

G D S

Part Number

Marking

Package

I-PAK (Short Lead)

I-PAK

SMK0465IS

SMK0465

(Short lead)

Marking Information

SMK

0465

YWW

Column 1, 2: Device Code

Column 3: Production Information

e.g.) YWW

-. YWW: Date Code (year, week)

Absolute maximum ratings (T_C=25°C unless otherwise noted)

Characteristic

Symbol

Rating

Unit

Drain-source voltage

V_DSS

V_GSS

650

±30

Gate-source voltage

Drain current (DC) ^*

T_c=25°C

I_D

2.5

T_c=100°C

Drain current (Pulsed) ^*

I_DM

I_AR

Single avalanche current ^{(Note 2)}

Single pulsed avalanche energy ^{(Note 2)}

Repetitive avalanche current ^{(Note 1)}

Repetitive avalanche energy ^{(Note 1)}

Power dissipation

E_AS

I_AR

81.5

E_AR

P_D

3.4

°C

Junction temperature

T_J

150

-55~150

Storage temperature range

T_stg

* Limited only maximum junction temperature

Rev. date: 16-JUL-12

KSD-T6Q016-000

www.auk.co.kr

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