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SMJ416160 PDF预览

SMJ416160

更新时间： 2024-01-02 01:38:19
品牌 Logo 应用领域
德州仪器 - TI 存储
页数 文件大小 规格书
24页 363K
描述
1048576 BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORIES

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SMJ416160 数据手册

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SMJ416160, SMJ418160  
1048576 BY 16-BIT  
DYNAMIC RANDOM-ACCESS MEMORIES  
SGMS720D – APRIL 1995 – REVISED SEPTEMBER 1997  
HKD PACKAGE  
(TOP VIEW)  
Organization . . . 1048576 by 16 Bits  
Single 5-V Power Supply (±10% Tolerance)  
Performance Ranges:  
1
50  
49  
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
V
V
SS  
CC  
ACCESS ACCESS ACCESS READ OR  
2
DQ0  
DQ1  
DQ2  
DQ3  
DQ15  
DQ14  
DQ13  
DQ12  
TIME  
TIME  
TIME  
WRITE  
CYCLE  
MIN  
130 ns  
150 ns  
3
t
t
t
RAC  
CAC  
AA  
MAX  
70 ns  
80 ns  
MAX  
18 ns  
20 ns  
MAX  
35 ns  
40 ns  
4
’41x160-70  
’41x160-80  
5
6
V
V
CC  
SS  
Enhanced Page-Mode Operation for Faster  
Memory Access  
CAS-Before-RAS (CBR) Refresh  
Long Refresh Period  
– ’416160 – 4096-Cycle Refresh in 32 ms  
(Maximum)  
– ’418160 – 1024-Cycle Refresh in 8 ms  
(Maximum)  
7
DQ4  
DQ5  
DQ6  
DQ7  
NC  
NC  
NC  
NC  
DQ11  
DQ10  
DQ9  
DQ8  
NC  
NC  
NC  
NC  
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
3-State Unlatched Output  
Low Power Dissipation  
All Inputs/Outputs Are TTL Compatible  
Packaging  
50-Lead, 650-Mil-Wide Ceramic Flatpack  
Operating Free-Air Temperature Range  
NC  
NC  
NC  
LCAS  
UCAS  
OE  
A9  
A8  
W
RAS  
A11  
A10  
†
†
–55°C to 125°C  
A0  
A1  
A2  
A3  
A7  
A6  
A5  
A4  
description  
The SMJ41x160 series is a set of 16777216-bit  
dynamic random-access memories (DRAMs)  
organized as 1048576 words of 16 bits each.  
V
V
SS  
CC  
†
A10 and A11 are NC for SMJ418160.  
They employ state-of-the-art technology for high  
performance, reliability, andlowpoweratlowcost.  
PIN NOMENCLATURE  
These devices feature maximum RAS access  
times of 70 ns and 80 ns. All addresses and  
data-in lines are latched on-chip to simplify  
system design. Data out is unlatched to allow  
greater system flexibility.  
A0–A11  
DQ0–DQ15  
LCAS  
UCAS  
NC  
Address Inputs  
Data In/Data Out  
Lower Column-Address Strobe  
Upper Column-Address Strobe  
No Internal Connection  
Output Enable  
OE  
RAS  
Row-Address Strobe  
5-V Supply  
Ground  
The SMJ41x160 series is offered in a 50-lead,  
650-mil-wide ceramic flatpack and is character-  
ized for operation from –55°C to 125°C.  
V
CC  
V
SS  
W
Write Enable  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 1997, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443  
1234567...24

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与SMJ416160相关器件

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SMJ416160-60HKDM TI

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 		1MX16 FAST PAGE DRAM, 60ns, CDFP50, 0.650 INCH, CERAMIC, DFP-50
SMJ416160-70HKDM TI

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 		1MX16 FAST PAGE DRAM, 70ns, CDFP50, CERAMIC, DFP-50
SMJ416160-80HKD TI

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 		1MX16 FAST PAGE DRAM, 80ns, CDFP50, 0.650 INCH, CERAMIC, DFP-50
SMJ416400 TI

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 		4194304 BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY
SMJ416400-10FNCM TI

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 		4MX4 FAST PAGE DRAM, 100ns, CDSO24, 0.450 INCH, CERAMIC, LCC-28/24
SMJ416400-10FNCMT TI

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 		4MX4 FAST PAGE DRAM, 100ns, CDSO24, 0.450 INCH, CERAMIC, LCC-28/24
SMJ416400-10HKB TI

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 		4MX4 FAST PAGE DRAM, 100ns, CDFP28, CERAMIC, DFP-28
SMJ416400-10HKBM TI

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 		4MX4 FAST PAGE DRAM, 100ns, CDFP28, CERAMIC, DFP-28
SMJ416400-10SV TI

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 		4MX4 FAST PAGE DRAM, 100ns, CZIP24, CERAMIC, ZIP-24
SMJ416400-10SVM TI

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 		4MX4 FAST PAGE DRAM, 100ns, CDIP24, CERAMIC, DIP-24

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