生命周期: | Active | 包装说明: | DIP, |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.02 | 风险等级: | 5.64 |
访问模式: | PAGE | 最长访问时间: | 200 ns |
其他特性: | RAS ONLY REFRESH | JESD-30 代码: | R-CDIP-T16 |
JESD-609代码: | e0 | 内存密度: | 65536 bit |
内存集成电路类型: | PAGE MODE DRAM | 内存宽度: | 1 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 16 | 字数: | 65536 words |
字数代码: | 64000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 110 °C | 最低工作温度: | -55 °C |
组织: | 64KX1 | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装代码: | DIP | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 座面最大高度: | 5.08 mm |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 4.5 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | NO |
技术: | NMOS | 温度等级: | OTHER |
端子面层: | TIN LEAD | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
宽度: | 7.62 mm | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
SMJ4164-20JDL | ROCHESTER | Page Mode DRAM, 64KX1, 200ns, NMOS, CDIP16, 0.300 INCH, HERMETIC SEALED, SIDE BRAZED, CERA |
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SMJ4164-20JDM | ROCHESTER | Fast Page DRAM |
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SMJ417100-10FNCM | TI | 16MX1 FAST PAGE DRAM, 100ns, CDSO24, 0.450 INCH, CERAMIC, SOLCC-28/24 |
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SMJ417100-10HKBM | TI | IC 16M X 1 FAST PAGE DRAM, 100 ns, CDFP28, FP-28, Dynamic RAM |
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SMJ417100-60FNCM | TI | 16MX1 FAST PAGE DRAM, 60ns, CDSO24, 0.450 INCH, CERAMIC, SOLCC-28/24 |
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SMJ417100-60HKBM | TI | 16MX1 FAST PAGE DRAM, 60ns, CDFP28, FP-28 |
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