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SMF58A PDF预览

SMF58A

更新时间: 2024-02-12 01:45:24
品牌 Logo 应用领域
威世 - VISHAY 局域网光电二极管
页数 文件大小 规格书
3页 25K
描述
Trans Voltage Suppressor Diode, 1000W, 58V V(RWM), Unidirectional, 1 Element, Silicon, DO-219AA, PLASTIC, SMF, 2 PIN

SMF58A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:compliant
风险等级:5.28Base Number Matches:1

SMF58A 数据手册

 浏览型号SMF58A的Datasheet PDF文件第2页浏览型号SMF58A的Datasheet PDF文件第3页 
SMF5.0A thru SMF188A  
New Product  
Vishay Semiconductors  
formerly General Semiconductor  
Surface Mount TransZorb®  
Transient Voltage Suppressors  
Stand-off Voltage 5.0 to 188V  
Peak Pulse Power  
1000W (8/20ms pulse)  
200W (10/1000ms pulse)  
DO-219 (SMF)  
Cathode Band  
Top View  
Mounting Pad Layout  
1.2  
1.6  
1.8 ± 0.1  
1.0 ± 0.2  
1.2  
Dimensions in  
millimeters  
2.8 ± 0.1  
0.60 ± 0.25  
3.7 ± 0.2  
5°  
0.98 ± 0.1  
5°  
0.05 - 0.30  
Z
Detail Z  
enlarged  
Features  
For surface mounted applications.  
Low-profile package  
0.00 – 0.10  
Optimized for LAN protection applications  
Ideal for ESD protection of data lines in accordance  
with IEC 1000-4-2 (IEC801-2)  
Mechanical Data  
Case: Low-profile plastic case  
Terminals: Solder plated, solderable per  
MIL-STD-750, Method 2026  
Ideal for EFT protection of data lines in accor-  
dance with IEC 1000-4-4 (IEC801-4)  
Glass passivated junction  
Low incremental surge resistance, excellent  
clamping capability  
200W peak pulse power capability with a 10/1000µs  
waveform, repetition rate (duty cycle): 0.01%  
(150W above 78V)  
Very fast response time  
High temperature soldering guaranteed:  
250°C/10 seconds at terminals  
Polarity: The band denotes the cathode, which is  
positive with respect to the anode under normal  
TVS operation  
Mounting Position: Any  
Weight: approx. 0.01g  
Packaging codes-options:  
G1-10K per 13reel (8mm tape), 50K/box  
G2-3K per 7reel (8mm tape), 30K/box  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
Value  
Unit  
Peak pulse power dissipation with a 10/1000µs waveform(1)  
8/20µs waveform  
200  
1000  
PPPM  
W
Peak pulse current with a 10/1000µs waveform(1)  
IPPM  
See Next Table  
20  
A
Peak forward surge current 8.3ms single half sine-wave  
uni-directional only  
IFSM  
A
Operating junction and storage temperature range  
TJ, TSTG  
–55 to +150  
°C  
Note: (1) Non-repetitive current pulse and derated above TA = 25°  
Rating is 150W (10/1000µs pulse) above 78V  
Document Number 88433  
12-Sep-02  
www.vishay.com  
1

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