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SMF33A PDF预览

SMF33A

更新时间: 2024-11-25 19:09:07
品牌 Logo 应用领域
虹扬 - HY IOT二极管
页数 文件大小 规格书
4页 38K
描述
Trans Voltage Suppressor Diode, 200W, 33V V(RWM), Unidirectional, 1 Element, Silicon,

SMF33A 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:R-PDSO-F2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.18Is Samacsys:N
其他特性:EXCELLENT CLAMPING CAPABILITY最大击穿电压:40.6 V
最小击穿电压:36.7 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:R-PDSO-F2最大非重复峰值反向功率耗散:200 W
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大重复峰值反向电压:33 V
表面贴装:YES技术:AVALANCHE
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SMF33A 数据手册

 浏览型号SMF33A的Datasheet PDF文件第2页浏览型号SMF33A的Datasheet PDF文件第3页浏览型号SMF33A的Datasheet PDF文件第4页 
SMF SERIES  
SURFACE MOUNT  
UNIDIRECTIONAL AND BIDIRECTIONAL  
TRANSIENT VOLTAGE SUPPRESSORS  
REVERSE VOLTAGE - 5.0 to 170 Volts  
POWER DISSIPATION - 200 Watts  
.
SOD-123FL  
FEATURES  
For surface mounted applications in order to  
optimize board space  
.114(2.9)  
.098(2.5)  
Low profile space  
Glass passivated chip  
Low inductance  
.039(1.0)  
.024(0.6)  
Excellent clamping capability  
Very fast response time  
Typical ID less than 1µA at VWM  
200 W peak pulse power capability  
with a 10/1000 µs waveform  
Component in accordance to  
RoHS 2002/95/1 and WEEE 2002/96/EC  
MECHANICAL DATA  
.047(1.2)  
.031(0.8)  
Case: JEDEC SOD-123FL molded plastic  
.043(1.1)  
.020(0.5)  
.154(3.9)  
.138(3.5)  
.004(0.1)max  
.010(0.25)  
.002(0.05)  
over passivated chip  
Terminals: Solder plated, solderable per  
MIL-STD-750 Method 2026  
Polarity: For uni-directional types the band  
by laser denotes the cathode, which is  
positive with respect to the anode under  
normal TVS operation  
Dimensions in inches and(millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave ,60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
VALUE  
200  
SYMBOL  
UNIT  
CHARACTERISTICS  
Peak pulse power dissipation  
PPPM  
WATTS  
with a 10/1000µs waveform (Note1,2)  
20  
Peak forward surge current 8.3ms single half sine-wave  
Peak pulse current 10/1000μS waveform(Note 1)  
Forward voltage @IF=200mA (Note 3)  
IFSM  
IPPM  
VF  
AMPS  
AMPS  
VOLTS  
See Next Table  
1.25  
-55 to + 150  
Operating Temperature Range  
TJ  
-55 to + 150  
Storage Temperature Range  
TSTG  
Notes: 1.Non-repetitive current pulse and derated above TA=25℃  
2.Mounted on 5.0mm2 copper pads to each terminal.  
3. 8.3ms single half-wave duty cycle=4 pulses per minutes maximum (uni-directional units only).  
REV. 1, 30-Dec-2011  
~ 334 ~  

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