5秒后页面跳转
SMF33A PDF预览

SMF33A

更新时间: 2024-11-27 04:03:51
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical 二极管IOT
页数 文件大小 规格书
4页 119K
描述
SURFACE MOUNT ESD PROTECTION DIODES

SMF33A 数据手册

 浏览型号SMF33A的Datasheet PDF文件第2页浏览型号SMF33A的Datasheet PDF文件第3页浏览型号SMF33A的Datasheet PDF文件第4页 
GALAXY ELECTRICAL  
1N6267- - -1N6303A  
BL  
BREAKDOWN VOLTAGE: 6.8 --- 200 V  
PEAK PULSE POWER: 1500 W  
TRANSIENT VOLTAGE SUPPRESSOR  
FEATURES  
Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
DO-201AE  
Glass passivated junction  
1500W peak pulse power capability with a 10/1000μs  
waveform, repetition rate (duty cycle): 0.05%  
Excellent clamping capability  
Low incremental surge resistance  
Fast response time: typically less than 1.0ps from 0 Volts to  
V(BR) for uni-directional and 5.0ns for bi-directional types  
For devices with V(BR) 10V,ID are typically less than 1.0μA  
High temperature soldering guaranteed:265 / 10 seconds,  
0.375"(9.5mm) lead length, 51bs. (2.3kg) tension  
MECHANICAL DATA  
Case:JEDEC DO-201AE, molded plastic  
Polarity: Color band denotes positive end  
( cathode ) except for bidirectional  
Weight: 0.032 ounces, 0.9 grams  
Mounting position: Any  
DEVICES FOR BIDIRECTIONAL APPLICATIONS  
For bi-directional use C or CA suffixfor types 1N6267 thru types 1N6303A (e.g. 1N6267, 1N6303A).  
Electrical characteristics apply in both directions.  
MAXIMUM RATINGS AND CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
SYMBOL  
PPPM  
VALUE  
UNIT  
W
Peak pow er dissipation w ith a 10/1000μs w aveform (NOTE1, FIG.1)  
Peak pulse current w ith a 10/1000μs w aveform (NOTE1)  
Minimum 1500  
SEE TABLE 1  
IPPM  
A
Steady state pow er dissipation at TL=75  
ffffflead lengths 0.375"(9.5mm) (NOTE2)  
PM(AV)  
IFSM  
6.5  
W
A
Peak forw ard surge current, 8.3ms single half  
ffffsine-w ave superimposed on rated load (JEDEC Method) (NOTE3)  
200.0  
Maximum instantaneous forw ard voltage at 100 A for unidirectional only (NOTE4)  
Typical thermal resistance junction-to-lead  
VF  
RθJL  
3.5/5.0  
20  
V
/W  
/W  
Typical thermal resistance junction-to-ambient  
RθJA  
75  
Operating junction and storage temperature range  
TJ, TSTG  
-50---+175  
NOTES: (1) Non-repetitive current pules, per Fig. 3 and derated above TA=25 per Fig. 2  
(2) Mounted on copper pad area of 1.6" x 1.6"(40 x40mm2) per Fig. 5  
www.galaxycn.com  
(3) Measured of 8.3ms single half sine-w ave or equare w ave, duty cycle=4 pulses per minute maximum  
(4) VF=3.5 Volt max. for devices of V(BR) 200V, and VF=5.0 Volt max. for devices of V(BR) >200V  
BLGALAXY ELECTRICAL  
1.  
Document Number 0285011  

与SMF33A相关器件

型号 品牌 获取价格 描述 数据表
SMF33A/G1 VISHAY

获取价格

Trans Voltage Suppressor Diode, 33V V(RWM), Unidirectional,
SMF33A/G2 VISHAY

获取价格

Trans Voltage Suppressor Diode, 33V V(RWM), Unidirectional,
SMF33A-AU JJM

获取价格

车规瞬态电压抑制二极管
SMF33A-AU PANJIT

获取价格

SOD-123FL
SMF33A-E3-08 VISHAY

获取价格

Trans Voltage Suppressor Diode, 1000W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMF33A-E3-18 VISHAY

获取价格

TVS DIODE 33V 53.3V DO219AB
SMF33AF SWST

获取价格

瞬态电压抑制管
SMF33AG ONSEMI

获取价格

Zener Transient Voltage Suppressor SOD−123 Flat Lead Package
SMF33A-HE3-08 VISHAY

获取价格

TVS DIODE 33V 53.3V DO219AB
SMF33A-HM3-08 VISHAY

获取价格

TVS DIODE 33V 53.3V DO219AB