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SMF33A PDF预览

SMF33A

更新时间: 2024-11-25 04:03:51
品牌 Logo 应用领域
强茂 - PANJIT 二极管IOT
页数 文件大小 规格书
4页 121K
描述
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

SMF33A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-219AB
包装说明:R-PDSO-F2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.19
Is Samacsys:N最大击穿电压:40.6 V
最小击穿电压:36.7 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-219ABJESD-30 代码:R-PDSO-F2
最大非重复峰值反向功率耗散:200 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:1 W认证状态:Not Qualified
最大重复峰值反向电压:33 V表面贴装:YES
技术:AVALANCHE端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SMF33A 数据手册

 浏览型号SMF33A的Datasheet PDF文件第2页浏览型号SMF33A的Datasheet PDF文件第3页浏览型号SMF33A的Datasheet PDF文件第4页 
SMF3.0A SERIES  
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR  
CURRENT  
3.0 to 170 Volts  
200Watts  
VOLTAGE  
FEATURES  
• For surface mounted applications in order to optimize board space.  
• Low profile paceage  
• Built-in strain relief  
• Low inductance  
• High temperature soldering : 260OC/10 seconds at terminals  
• In compliance with EU RoHS 2002/95/EC directives  
MECHANICAL DATA  
• Case: JEDEC DO-219AB,Molded plastic over passivated junction.  
Terminals: Solderable per MIL-STD-750, Method 2026  
• Polarity: Color band denotes positive end (cathode)  
• Approx. Weight: 0.0168 gram  
• Standrad Packaging : 8mm tape (EIA-481)  
DEVICES FOR BIPOLARAPPLICATIONS  
Electrical characteristics apply in both directions  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25OC ambient temperature unless otherwise specified.  
Rating  
Symbol  
Value  
200  
Units  
Peak Pulse Power Dissipation on T A = 25 OC (Notes 1,2,5, Fig.1)  
P
PPM  
Watts  
Peak Forward Surge Current per (Note 3)  
Peak Pulse Current on 10/1000s waveform(Note 1)Fig.2  
Steady State Power Dissipation (NOTE 4)  
Operating Junction and Storage Temperature Range  
Thermal resistance  
I
FSM  
20  
see Table 1  
1.0  
Amps  
Amps  
Watts  
OC  
IPPM  
P
M(AV)  
T
J
,TSTG  
-55 to +150  
180  
RθJA  
OC  
NOTES :  
1.Non-repetitive current pulse, per Fig.3 and derated above TA=25OC per Fig.2 .  
2.Mounted on 5.0mm2 copper pads to each terminal.  
3.8.3ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minutes maximum.  
4.lead temperature at 75OC =TL .  
5.Peak pulse power waveform is 10/1000us .  
PAGE . 1  
STAD-MAY.25.2007  

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