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SMF30A PDF预览

SMF30A

更新时间: 2024-02-08 22:58:12
品牌 Logo 应用领域
威世 - VISHAY 瞬态抑制器二极管IOT
页数 文件大小 规格书
6页 213K
描述
Surface Mount ESD Protection Diodes

SMF30A 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-F2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
Factory Lead Time:12 weeks风险等级:1.65
其他特性:HIGH RELIABILITY最小击穿电压:33.3 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PDSO-F2
湿度敏感等级:1最大非重复峰值反向功率耗散:200 W
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:1 W参考标准:AEC-Q101; IEC-61000-4-2
最大重复峰值反向电压:30 V表面贴装:YES
技术:AVALANCHE端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SMF30A 数据手册

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SMF5V0A to SMF51A  
Vishay Semiconductors  
Surface Mount ESD Protection Diodes  
Features  
• For surface mounted applications  
• Low-profile package  
e3  
• Optimized for LAN protection applications  
• Ideal for ESD protection of data lines in  
accordance with IEC 61000-4-2 (IEC801-2)  
17249  
• Ideal for EFT protection of data lines in  
accordance with IEC 61000-4-4 (IEC801-4)  
• IEC 61000-4-2 (ESD) 15 kV (air) 8 kV (contact)  
• Low incremental surge resistance, excellent  
clamping capability  
• 200 W peak pulse power capability with a  
Mechanical Data  
Case: JEDEC DO-219AB (SMF ) Plastic case  
Terminals: Solder plated, solderable per  
MIL-STD-750, Method 2026  
Polarity:The band denotes the cathode, which is  
positive with respect to the anode under normal  
TVS operation  
10/1000 µs waveform, repetition rate  
(duty cycle): 0.01 %  
®
• Very fast response time  
• High temperature soldering guaranteed:  
260 °C/ 10 seconds at terminals  
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Mounting Position: Any  
Weight: approx. 15 mg  
Packaging Codes/Options:  
GS18 / 10 k per 13 " reel (8 mm tape), 50 k/box  
GS08 / 3 k per 7 " reel (8 mm tape), 30 k/box  
Absolute Maximum Ratings  
Ratings at 25 °C, ambient temperature unless otherwise specified  
Parameter  
Test condition  
10/1000 µs waveform1)  
8/20 µs waveform1)  
Symbol  
PPPM  
Value  
200  
Unit  
W
Peak pulse power dissipation  
PPPM  
IPPM  
1000  
W
A
10/1000 µs waveform1)  
Peak pulse current  
next  
Table  
Peak forward surge current  
8.3 ms single half sine-wave  
IFSM  
20  
A
1) Non-repetitive current pulse and derated above TA = 25 °C  
Thermal Characteristics  
Ratings at 25 °C, ambient temperature unless otherwise specified  
Parameter  
Thermal resistance2)  
Test condition  
Symbol  
RthJA  
Value  
180  
Unit  
K/W  
Operation junction and storage  
temperature range  
T
stg, TJ  
- 55 to + 150  
°C  
2) Mounted on epoxy glass PCB with 3 x 3 mm, Cu pads ( 40 µm thick)  
Document Number 85811  
Rev. 2.0, 29-Apr-05  
www.vishay.com  
1

SMF30A 替代型号

型号 品牌 替代类型 描述 数据表
SMF30A DIOTEC

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