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SMF190A

更新时间： 2024-02-03 09:18:46
品牌 Logo 应用领域
优恩 - UNSEMI 局域网测试光电二极管
页数 文件大小 规格书
6页 598K
描述
Surface Mount Transient Voltage Suppressors

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中文翻译

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SMF190A 技术参数

生命周期：Active包装说明：R-PDSO-F2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.74
最大击穿电压：238 V最小击穿电压：220 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：R-PDSO-F2
最大非重复峰值反向功率耗散：200 W元件数量：1
端子数量：2最高工作温度：150 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性：UNIDIRECTIONAL最大功率耗散：1 W
最大重复峰值反向电压：190 V表面贴装：YES
技术：AVALANCHE端子形式：FLAT
端子位置：DUALBase Number Matches：1

SMF190A 数据手册

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Surface Mount Transient Voltage Suppressors (TVS)  
SMF Series  
5.0 To 190 V  
200W  
Uni-directional  
Bi-directional  
Description  
The SMF series is designed specifically to protect sensitive electronic  
equipment from voltage transients induced by lightning and other transient  
voltage events.  
Features  
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Compatible with industrial standard package SOD-123  
For surface mounted applications in order to optimize board space  
Low leakage  
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Uni and Bidirectional unit  
Glass passivated junction  
Low inductance  
Excellent clamping capability  
Functional Diagram  
200W Peak power capability at 10 × 1000µs waveform Repetition rate  
(duty cycle):0.01%  
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Fast response time: typically less than 1.0ps from 0 Volts to VBR min  
High Temperature soldering: 260°C/40 seconds at terminals  
Typical maximum temperature coefficient ΔVBR = 0.1% ×  
VBR@25°C× ΔT  
Bi-directional  
Cathode  
Anode  
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Plastic package has Underwriters Laboratory Flammability 94V-0  
Matte tin lead–free Plated  
Uni-direction  
Halogen free and RoHS compliant  
Typical failure mode is short from over-specified voltage or current  
Whisker test is conducted based on JEDEC JESD201A per its table  
4a and 4c  
Applications  
TVS devices are ideal for the protection of I/O interfaces, VCC  
bus and other vulnerable circuits used in Telecom, Computer,  
Industrial and Consumer electronic applications.  
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IEC-61000-4-2 ESD 15kV(Air), 8kV (Contact)  
ESD protection of data lines in accordance with IEC 61000-4-2  
(IEC801-2)  
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EFT protection of data lines in accordance with IEC 61000-4-4  
(IEC801-4)  
Maximum Ratings (TA=25℃ unless otherwise noted)  
Parameter  
Symbol  
Value  
Unit  
Peak Pulse Power Dissipation with a 10/1000µs waveform (Fig.1)(Note  
1), (Note 2)  
PPPM  
200  
Watts  
Peak Pulse Power Dissipation with a 8/20µs waveform (Fig.1)(Note 1),  
(Note 2)  
PPPM  
1000  
Watts  
Peak Pulse Current with a 10/1000µs waveform.(Note1,Fig.3)  
Power Dissipation on Infinite Heat Sink at TL=75°C  
IPP  
PM(AV)  
IFSM  
See Next Table  
Amps  
Watt  
0.4  
20  
Peak Forward Surge Current, 8.3ms Single Half Sine Wave (Note 3)  
Amps  
Maximum Instantaneous Forward Voltage at 25A for Unidirectional Only  
(Note 4)  
VF  
3.5  
Voltage  
Operating junction and Storage Temperature Range.  
TJ , TSTG  
-55 to +150  
°C  
Notes:  
1. Non-repetitive current pulse, per Fig. 3 and derated above TA = 25°C per Fig. 2.  
2. Mounted on 5.0mm x 5.0mm (0.03mm thick) Copper Pads to each terminal.  
3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle = 4 pulses per minutes maximum.  
4. VF < 3.5V for VBR < 200V and VF< 6.5V for VBR > 201V.  
UN Semiconductor Co., Ltd.  
www.unsemi.com.tw  
@ UN Semiconductor Co., Ltd. 2013  
Revision October 18, 2013  
1 / 6  
Specifications are subject to change without notice.  
Please refer to www.unsemi.com.tw for current information.  
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