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SMDJ8.0CA-T7 PDF预览

SMDJ8.0CA-T7

更新时间： 2024-02-16 06:28:39
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网光电二极管
页数 文件大小 规格书
6页 1053K
描述
Trans Voltage Suppressor Diode, 3000W, 8V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AB, SMC, 2 PIN

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SMDJ8.0CA-T7 技术参数

是否Rohs认证： 符合生命周期：Active
零件包装代码：DO-214AB包装说明：R-PDSO-J2
针数：2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.46其他特性：EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
最大击穿电压：9.83 V最小击穿电压：8.89 V
击穿电压标称值：9.36 V最大钳位电压：13.6 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-214AB
JESD-30 代码：R-PDSO-J2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值反向功率耗散：3000 W
元件数量：1端子数量：2
最高工作温度：150 °C最低工作温度：-65 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性：BIDIRECTIONAL最大功率耗散：6.5 W
参考标准：IEC-61000-4-2; IEC-61000-4-4最大重复峰值反向电压：8 V
子类别：Transient Suppressors表面贴装：YES
技术：AVALANCHE端子面层：Matte Tin (Sn)
端子形式：J BEND端子位置：DUAL
处于峰值回流温度下的最长时间：40Base Number Matches：1

SMDJ8.0CA-T7 数据手册

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TransientVoltage Suppression Diodes  
Surface Mount – 3000W > SMDJ series  
RoHS  
SMDJ Series  
Description  
Uni-directional  
The SMDJ series is designed specifically to protect  
sensitive electronic equipment from voltage transients  
induced by lightning and other transient voltage events.  
Bi-directional  
Features  
• For surface mounted  
applications in order to  
optimize board space  
• 3000W peak pulse power  
capability at 10/1000μs  
waveform, repetition rate  
(duty cycles):0.01%  
• Low profile package  
• Fast response time:  
typically less than 1.0ps  
from 0V to BV min  
• Excellent clamping  
capability  
•Typical failure mode is  
short from over-specified  
voltage or current  
• Whisker test is conducted  
based on JEDEC  
Agency Approvals  
AGENCY  
AGENCY FILE NUMBER  
E230531  
JESD201A per its table 4a • Low incremental surge  
and 4c  
resistance  
• IEC-61000-4-2 ESD  
• Typical IR less than 2µA  
15kV(Air), 8kV (Contact)  
above 12V  
Maximum Ratings andThermal Characteristics  
(TA=25°C unless otherwise noted)  
• ESD protection of data  
lines in accordance with  
IEC 61000-4-2 (IEC801-2)  
• EFT protection of data  
lines in accordance with  
IEC 61000-4-4 (IEC801-4)  
• Built-in strain relief  
• VBR @TJ= VBR@25°C × (1+αT  
x (TJ - 25))  
• High temperature  
soldering guaranteed:  
260°C/40 seconds at  
terminals  
• Plastic package has  
underwriters laboratory  
flammability 94V-O  
• Meet MSL level1, per  
J-STD-020, LF maximum  
peak of 260°C  
Parameter  
Symbol  
PPPM  
Value  
3000  
Unit  
W
Peak Pulse Power Dissipation at  
TA=25ºC by 10/1000µs Waveform  
(Fig.2)(Note 1), (Note 2)  
Power Dissipation on Infinite Heat  
Sink atTA=50°C  
PM(AV)  
IFSM  
6.5  
W
A
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave (Note 3)  
300  
(αT:Temperature Coefficient)  
Maximum Instantaneous Forward  
Voltage at 100A for Unidirectional  
Only  
• Matte tin lead–free plated  
• Halogen free and RoHS  
compliant  
• Glass passivated chip  
junction  
VF  
3.5  
V
Operating Junction and Storage  
Temperature Range  
TJ, TSTG -55 to 150  
°C  
Applications  
TypicalThermal Resistance Junction  
to Lead  
RuJL  
RuJA  
15  
75  
°C/W  
°C/W  
TVS devices are ideal for the protection of I/O Interfaces,  
CC bus and other vulnerable circuits used inTelecom,  
TypicalThermal Resistance Junction  
to Ambient  
V
Computer, Industrial and Consumer electronic applications.  
Notes:  
1. Non-repetitive current pulse , per Fig. 4 and derated aboveTA = 25°C per Fig. 3.  
2. Mounted on copper pad area of 0.31x0.31” (8.0 × 8.0mm) to each terminal.  
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional  
device only, duty cycle=4 per minute maximum.  
Additional Information  
Functional Diagram  
Datasheet  
Resources  
Samples  
Bi-directional  
Cathode  
Anode  
Uni-directional  
© 2014 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 01/24/14  
123456

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