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SMDJ8.0A PDF预览

SMDJ8.0A

更新时间： 2024-01-20 04:35:22
品牌 Logo 应用领域
优恩 - UNSEMI 二极管
页数 文件大小 规格书
7页 943K
描述
Surface Mount Transient Voltage Suppressors

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SMDJ8.0A 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：SMC, 2 PINReach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.5其他特性：EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
最大击穿电压：9.83 V最小击穿电压：8.89 V
击穿电压标称值：9.36 V最大钳位电压：13.6 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-214AB
JESD-30 代码：R-PDSO-C2最大非重复峰值反向功率耗散：3000 W
元件数量：1端子数量：2
最高工作温度：150 °C最低工作温度：-65 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性：UNIDIRECTIONAL最大功率耗散：6.5 W
最大重复峰值反向电压：8 V子类别：Transient Suppressors
表面贴装：YES技术：AVALANCHE
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED

SMDJ8.0A 数据手册

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Surface Mount Transient Voltage Suppressors (TVS)  
SMDJ Series  
5.0 To 440 V  
3000W  
Uni-directional  
Bi-directional  
Description  
The SMDJ series is designed specifically to protect sensitive electronic  
equipment from voltage transients induced by lightning and other transient  
voltage events.  
Features  
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For surface mounted applications in order to optimize board space  
Low leakage  
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Uni and Bidirectional unit  
Glass passivated junction  
Low inductance  
Excellent clamping capability  
3000W Peak power capability at 10 × 1000µs waveform Repetition  
rate (duty cycle):0.01%  
Functional Diagram  
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Fast response time: typically less than 1.0ps from 0 Volts to VBR min  
Typical IR less than 5μA above 12V.  
High Temperature soldering: 260°C/40 seconds at terminals  
Typical maximum temperature coefficient ΔVBR = 0.1% ×  
VBR@25°C× ΔT  
Bi-directional  
Cathode  
Anode  
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Plastic package has Underwriters Laboratory Flammability 94V-0  
Matte tin lead–free Plated  
Uni-direction  
Halogen free and RoHS compliant  
Typical failure mode is short from over-specified voltage or current  
Whisker test is conducted based on JEDEC JESD201A per its table  
4a and 4c  
Applications  
TVS devices are ideal for the protection of I/O interfaces, VCC  
bus and other vulnerable circuits used in Telecom, Computer,  
Industrial and Consumer electronic applications.  
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IEC-61000-4-2 ESD 15kV(Air), 8kV (Contact)  
ESD protection of data lines in accordance with IEC 61000-4-2  
(IEC801-2)  
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EFT protection of data lines in accordance with IEC 61000-4-4  
(IEC801-4)  
Maximum Ratings (TA=25℃ unless otherwise noted)  
Parameter  
Symbol  
Value  
Unit  
Peak Pulse Power Dissipation with a 10/1000µs waveform (Fig.1)(Note  
1), (Note 2)  
PPPM  
3000  
Watts  
Peak Pulse Current with a 10/1000µs waveform.(Note1,Fig.3)  
Power Dissipation on Infinite Heat Sink at TL=75°C  
Peak Forward Surge Current, 8.3ms Single Half Sine Wave (Note 3)  
Maximum Instantaneous Forward Voltage at 25A for Unidirectional Only  
(Note 4)  
IPP  
PM(AV)  
IFSM  
See Next Table  
Amps  
Watt  
6.0  
300  
Amps  
VF  
3.5/5.0  
Voltage  
Operating junction and Storage Temperature Range.  
TJ , TSTG  
-55 to +150  
°C  
Notes:  
1. Non-repetitive current pulse, per Fig. 3 and derated above TA = 25°C per Fig. 2.  
2. Mounted on 5.0mm x 5.0mm (0.03mm thick) Copper Pads to each terminal.  
3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle = 4 pulses per minutes maximum.  
4. VF < 3.5V for VBR < 200V and VF< 6.5V for VBR > 201V.  
UN Semiconductor Co., Ltd.  
www.unsemi.com.tw  
@ UN Semiconductor Co., Ltd. 2013  
Revision October 18, 2013  
1 / 7  
Specifications are subject to change without notice.  
Please refer to www.unsemi.com.tw for current information.  
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