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SMDJ18 PDF预览

SMDJ18

更新时间: 2024-01-20 05:09:19
品牌 Logo 应用领域
鲁光 - LGE 局域网光电二极管
页数 文件大小 规格书
4页 2472K
描述
暂无描述

SMDJ18 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-J2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.36其他特性:EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, UL RECOGNIZED
最大击穿电压:22.1 V最小击穿电压:20 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AB
JESD-30 代码:R-PDSO-J2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:3000 W
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:BIDIRECTIONAL最大功率耗散:6.5 W
最大重复峰值反向电压:18 V表面贴装:YES
技术:AVALANCHE端子面层:Matte Tin (Sn)
端子形式:J BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

SMDJ18 数据手册

 浏览型号SMDJ18的Datasheet PDF文件第2页浏览型号SMDJ18的Datasheet PDF文件第3页浏览型号SMDJ18的Datasheet PDF文件第4页 
SMDJ Series  
Surface Mount  
Transient Voltage Suppressors  
Working Voltage: 5.0 to 440 V  
Peak Pulse Power: 3000 W  
SMC/ DO-214AB  
Features  
Glass passivated chip  
3000 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate (duty  
cycle):0.01 %  
Low leakage  
Uni and Bidirectional unit  
Excellent clamping capability  
Very fast response time  
RoHS compliant  
Mechanical Data  
Case: Molded plastic  
Epoxy: UL 94V-0 rate flame retardant  
Lead: Solderable per MIL-STD-750, method  
2026  
Polarity: Color band denotes cathode end  
except Bipolar  
Mounting position: Any  
Maximum Ratings(TA=25unless otherwise noted)  
Value  
3000  
UNIT  
W
Parameter  
Symbol  
PPP  
Peak power dissipation with a 10/1000μs waveform(1)  
Peak pulse current wih a 10/1000μs waveform(1)  
Power dissipation on infinite heatsink at TL = 75 °C  
Peak forward surge current, 8.3 ms single half sine-  
IPP  
PD  
See Next Table  
6.5  
A
W
IFSM  
300  
A
wave unidirectional only(2)  
Maximum instantaneous forward voltage at 100A for  
unidirectional only(3)  
VF  
3.5/5.0  
V
Operating junction and storage temperature range  
TJ, TSTG  
55 to +150  
°C  
Note:  
(1)Non-repetitive current pulse per Fig.5 and derated above TA= 25 °C per Fig.1  
(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum  
(3)VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170301-P1  

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