Datasheet > SMDJ17A-HRA

SMDJ17A-HRA

更新时间： 2024-11-14 22:56:39

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网光电二极管电视
页数	文件大小	规格书
8页	809K
描述
TVS DIODE 17V 27.6V DO214AB

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

SMDJ17A-HRA 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	R-PDSO-J2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.36	其他特性：	EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, UL RECOGNIZED
最大击穿电压：	20.9 V	最小击穿电压：	18.9 V
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JEDEC-95代码：	DO-214AB
JESD-30 代码：	R-PDSO-J2	JESD-609代码：	e3
湿度敏感等级：	1	最大非重复峰值反向功率耗散：	3000 W
元件数量：	1	端子数量：	2
最高工作温度：	150 °C	最低工作温度：	-65 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
极性：	UNIDIRECTIONAL	最大功率耗散：	6.5 W
最大重复峰值反向电压：	17 V	表面贴装：	YES
技术：	AVALANCHE	端子面层：	Matte Tin (Sn)
端子形式：	J BEND	端子位置：	DUAL
处于峰值回流温度下的最长时间：	40	Base Number Matches：	1

SMDJ17A-HRA 数据手册

TVS Diodes Datasheet

SMDJ-HRA Series

Surface Mount – 3000W

Pb e3

RꢀHS

Description

The SMDJ-HRA High Reliability series is designed specifically to

protect sensitive electronic equipment from voltage transients

induced by lightning and other transient voltage events. These are

available with a variety of up-screening options for enhanced

reliability.

Uni-directional

Bi-directional

Features & Benefits

■ High reliability devices with

fabrication and assembly lots

traceability

■ Excellent clamping capability

■ Low incremental surge

resistance

■ Enhanced reliability screening

options are available in

reference to MIL-PRF-19500.

Refer to screen process table

for more detail on screening

options

■ Typical IR less than 2µA above

12V

■ HighTemperature soldering

guaranteed: 260°C/40 seconds

at terminals

Additional Information

■ Plastic package has

Underwriters laboratory

ﬂammability 94V-O

■ For surface mounted

applications in order to

optimize board space

■ Meet MSL level1, per

J-STD-020, LF maximun peak

of 260°C

■ Low proﬁle package

■ Built-in strain relief

Resources

Accessories

Samples

■ VBR @TJ= VBR@25°C x (1+αT

x (TJ - 25)) (αT:Temperature

Coefﬁcient)

■ Matte tin lead–free plated

■ Halogen free and RoHS

compliant

■ Glass passivated chip junction

Agency Approvals

■ 2nd level interconnect is Pb-

free per IPC/JEDEC J-STD-

609A.01

■ 3000W peak pulse power

capability at 10/1000μs

waveform, repetition rate (duty

cycles):0.01%

Agency

Agency File Number

■ Recognized to UL 497B as an

Isolated Loop Circuit Protector

E230531

■ Fast response time: typically

less than 1.0ps from 0V to BV

min

Maximum Ratings andThermal Characteristics

(T_A=25^OC unless otherwise noted)

Applications

Parameter

Symbol

Value

Unit

Peak Pulse Power Dissipation atT_A=25ºC

by 10/1000µs waveform (Fig.1)^{(Note 1), (Note 2)}

SMDJ-HRA devices are ideal for the high reliability protection of I/

O Interfaces, VCC bus and other vulnerable circuits used in

Telecom, Computer, Industrial and Consumer electronic

applications.

P_PPM

3000

Power Dissipation on inﬁnite heat sink at

T_A=50^OC

P_M(AV)

6.5

Peak Forward Surge Current, 8.3ms

Single Half Sine Wave ^{(Note 3)}

Maximum Instantaneous Forward

I_FSM

V_F

300

3.5

Functional Diagram

Voltage at 100A for Unidirectional only

Operating Junction and Storage

Temperature Range

T_J, T_STG-65 to 150 °C

TypicalThermal Resistance Junction to

Lead

TypicalThermal Resistance Junction to

Ambient

R_uJL

R_uJA

°C/W

ꢀi-ꢁireꢂꢃiꢄꢅꢆꢇ

ꢉꢆꢃꢊꢄꢁe

Aꢅꢄꢁe

Notes:

1. Non-repetitive current pulse , per Fig. 3 and derated above T_A= 25^OC per Fig. 2.

2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.

ꢈꢅi-ꢁireꢂꢃiꢄꢅꢆꢇ

3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional device only, duty

cycle=4 per minute maximum.

Speciﬁcations are subject to change without notice.

Revised: GD. 05/27/21

12 3 4 5 6 7 8

中文翻译

下载PDF

SMDJ17A-HRA 替代型号

型号	品牌	替代类型	描述	数据表
SMDJ17A-HR	LITTELFUSE	完全替代	Trans Voltage Suppressor Diode, 3000W, 17V V(RWM), Unidirectional, 1 Element, Silicon, DO-
TPSMD17A	LITTELFUSE	类似代替	TVS DIODE 17V 27.6V DO214AB
SMDJ17A	LITTELFUSE	类似代替	Transient Voltage Suppression Diodes

与SMDJ17A-HRA相关器件

型号	品牌	获取价格	描述	数据表
SMDJ17A-HRAT7	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 3000W, 17V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMDJ17AQ	YANGJIE	获取价格	SMC
SMDJ17A-Q1	ANBON	获取价格	SMC
SMDJ17A-T500	PROTEC	获取价格	Trans Voltage Suppressor Diode, 3000W, 17V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMDJ17A-T7	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 3000W, 17V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMDJ17C	LITTELFUSE	获取价格	TVS DIODE 17V 28.98V DO214AB
SMDJ17C	UNSEMI	获取价格	Surface Mount Transient Voltage Suppressors (TVS)
SMDJ17C	SOCAY	获取价格	Surface Mount Transient Voltage Suppressors (TVS)
SMDJ17C	LGE	获取价格	瞬态抑制二极管
SMDJ17CA	MERITEK	获取价格	Transient Voltage Suppressors

与SMDJ17A-HRA相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

2
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

2
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

29
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

12

产品中心

服务支持

精选活动

关于我们

帮助中心

SMDJ17A-HRA

SMDJ17A-HRA 技术参数

SMDJ17A-HRA 数据手册

SMDJ17A-HRA 替代型号

与SMDJ17A-HRA相关器件

与SMDJ17A-HRA相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SMDJ17A-HRA

SMDJ17A-HRA 技术参数

SMDJ17A-HRA 数据手册

SMDJ17A-HRA 替代型号

与SMDJ17A-HRA相关器件

与SMDJ17A-HRA相关文章

您还可以找

您在本页遇到什么问题？