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SMDJ100A-HRA PDF预览

SMDJ100A-HRA

更新时间： 2024-02-16 09:56:19
品牌 Logo 应用领域
力特 - LITTELFUSE 瞬态抑制器二极管光电二极管局域网
页数 文件大小 规格书
5页 190K
描述
Trans Voltage Suppressor Diode, 3000W, 100V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, SMC, 2 PIN

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SMDJ100A-HRA 技术参数

生命周期：Contact Manufacturer包装说明：SMC, 2 PIN
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.34
其他特性：EXCELLENT CLAMPING CAPABILITY, PRSM-MIN最大击穿电压：128.7 V
最小击穿电压：105.3 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-214ABJESD-30 代码：R-PDSO-C2
最大非重复峰值反向功率耗散：3000 W元件数量：1
端子数量：2最高工作温度：150 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性：BIDIRECTIONAL最大功率耗散：6 W
最大重复峰值反向电压：100 V表面贴装：YES
技术：AVALANCHE端子形式：C BEND
端子位置：DUALBase Number Matches：1

SMDJ100A-HRA 数据手册

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TransientVoltage Suppression Diodes  
Surface Mount – 3000W > SMDJ series  
RoHS  
SMDJ Series  
Description  
The SMDJ series is designed specifically to protect  
sensitive electronic equipment from voltage transients  
induced by lightning and other transient voltage events.  
Features  
tꢀ)BMPHFOꢁ'SFF  
tꢀ 3P)4ꢀDPNQMJBOU  
tꢀ 'PSꢀTVSGBDFꢀNPVOUFEꢀ  
applications in order to  
optimize board space  
tꢀ 'BTUꢀSFTQPOTFꢀUJNFꢄꢀ  
typically less than 1.0ps  
from 0V to BV min  
tꢀ &YDFMMFOUꢀDMBNQJOHꢀ  
capability  
tꢀ -PXꢀJODSFNFOUBMꢀTVSHFꢀ  
resistance  
tꢀ 5ZQJDBMꢀ*R less than 2μA  
above 12V  
tꢀ )JHIꢀ5FNQFSBUVSFꢀ  
soldering guaranteed:  
260°C/40 seconds at  
terminals  
tꢀ 1MBTUJDꢀQBDLBHFꢀIBTꢀ  
Underwriters Laboratory  
Flammability 94V-O  
Agency Approvals  
tꢀ -PXꢀQSPmMFꢀQBDLBHF  
tꢀ #VJMUꢁJOꢀTUSBJOꢀSFMJFG  
tꢀ 5ZQJDBMꢀNBYJNVNꢀ  
temperature coefficient  
ΔVBR = 0.1% x VBR@25°C x ΔT  
AGENCY  
AGENCY FILE NUMBER  
E230531  
tꢀ (MBTTꢀQBTTJWBUFEꢀDIJQꢀ  
junction  
tꢀ ꢂꢃꢃꢃ8ꢀQFBLꢀQVMTFꢀQPXFSꢀ  
capability at 10×1000ꢀs  
waveform, repetition rate  
(duty cycles):0.01%  
Maximum Ratings andThermal Characteristics  
(TA=25OC unless otherwise noted)  
Parameter  
Symbol  
PPPM  
Value  
3000  
Unit  
W
Peak Pulse Power Dissipation at  
TA=25ºC by 10x1000μs waveform  
(Fig.1)(Note 1), (Note 2)  
tꢀ .BUUFꢀ5JOꢀ-FBEoGSFFꢀ1MBUFE  
Power Dissipation on infinite heat  
sink atTA=50OC  
PM(AV)  
IFSM  
6.5  
W
A
Applications  
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave (Note 3)  
300  
TVS devices are ideal for the protection of I/O Interfaces,  
CC bus and other vulnerable circuits used inTelecom,  
V
Maximum Instantaneous Forward  
Voltage at 100A for Unidirectional  
only  
Computer, Industrial and Consumer electronic applications.  
VF  
3.5  
V
Operating Junction and Storage  
Temperature Range  
T , TSTG -65 to 150  
°C  
J
TypicalThermal Resistance Junction  
to Lead  
RuJL  
RuJA  
15  
75  
°C/W  
°C/W  
TypicalThermal Resistance Junction  
to Ambient  
Notes:  
1. Non-repetitive current pulse , per Fig. 3 and derated aboveTA = 25OC per Fig. 2.  
2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.  
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional  
device only, duty cycle=4 per minute maximum.  
©2009 Littelfuse, Inc.  
53  
Revision: January 09, 2009  
SMDJ Series  
Specifications are subject to change without notice.  
Please refer to http://www.Littelfuse.com/series/SMDJ.html for current information.  
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SMDJ100A-HRA 替代型号

型号 品牌 替代类型 描述 数据表
SMDJ100A-HR LITTELFUSE

完全替代

 TVS DIODE 100V 162V DO214AB
SMDJ100A-T7 LITTELFUSE

类似代替

 Trans Voltage Suppressor Diode, 3000W, 100V V(RWM), Unidirectional, 1 Element, Silicon, DO
SMDJ100A LITTELFUSE

类似代替

 Transient Voltage Suppression Diodes

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