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SMDA12C-4-2/TR13 PDF预览

SMDA12C-4-2/TR13

更新时间： 2024-11-17 06:49:19
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
2页 104K
描述
Trans Voltage Suppressor Diode, 300W, 12V V(RWM), Bidirectional, 4 Element, Silicon, PLASTIC, SO-8

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SMDA12C-4-2/TR13 技术参数

是否Rohs认证： 不符合生命周期：Active
包装说明：R-PDSO-G8Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.73其他特性：COMMON BIDIRECTIONAL ELEMENT, LOW CAPACITANCE
最小击穿电压：13.3 V配置：COMMON BIPOLAR TERMINAL, 4 ELEMENTS
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：R-PDSO-G8最大非重复峰值反向功率耗散：300 W
元件数量：4端子数量：8
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性：BIDIRECTIONAL最大重复峰值反向电压：12 V
表面贴装：YES技术：AVALANCHE
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

SMDA12C-4-2/TR13 数据手册

 浏览型号SMDA12C-4-2/TR13的Datasheet PDF文件第2页 
SMDA03C-4-2  
8700 E. Thomas Road  
Scottsdale, AZ 85251  
Tel: (480) 941-6300  
Fax: (480) 947-1503  
thru  
SMDA24C-4-2  
TVSarrayÔ Series  
DESCRIPTION (300 watt)  
This TRANSIENT VOLTAGE SUPPRESSOR (TVS) array is packaged  
in a SO-8 configuration giving protection to 4 Bidirectional data or  
interface lines. It is designed for use in applications where protection  
is required at the board level from voltage transients caused by  
electrostatic discharge (ESD) as defined in IEC 1000-4-2, electrical  
fast transients (EFT) per IEC 1000-4-4 and effects of secondary  
lighting.  
These TVS arrays have a peak power rating of 300 watts for an 8/20msec pulse. This array is suitable for  
protection of sensitive circuitry consisting of TTL, CMOS DRAM’s, SRAM’s, HCMOS, HSIC  
microprocessors, and I/O transceivers. The SMDAXXC-4-2 product provides board level protection from  
static electricity and other induced voltage surges that can damage sensitive circuitry.  
FEATURES  
MECHANICAL  
·
·
·
Protects up to 4 Bidirectional lines  
·
·
·
·
Molded SO-8 Surface Mount  
Surge protection Per IEC 1000-4-2, 1000-4-4  
SO-8 Packaging  
Weight: 0.066 grams (approximate)  
Marking: Logo, device number, date code  
Pin #1 defined by DOT on top of package  
MAXIMUM RATINGS  
PACKAGING  
·
·
·
·
Operating Temperatures: -550C to +1500C  
Storage Temperature: -550C to +1500C  
Peak Pulse Power: 300 Watts (8/20 msec, Figure 1)  
Pulse Repetition Rate: <.01%  
·
·
·
Tape & Reel EIA Standard 481-1-A  
13 inch reel 2,500 pieces (OPTIONAL)  
Carrier tubes 95 pcs per (STANDARD)  
ELECTRICAL CHARACTERISTICS PER LINE @ 250C Unless otherwise specified  
STAND  
OFF  
VOLTAGE  
VWM  
BREAKDOWN  
VOLTAGE  
VBR  
CLAMPING  
VOLTAGE  
VC  
@ 1 Amp  
(FIGURE 2)  
VOLTS  
CLAMPING  
VOLTAGE  
VC  
@ 5 Amp  
(FIGURE 2)  
VOLTS  
LEAKAGE  
CURRENT  
ID  
CAPACITANCE  
(f=1 MHz)  
@0V  
TEMPERATURE  
COEFFICIENT  
OF VBR  
PART  
DEVICE  
@1 mA  
@ VWM  
C
áVBR  
mV/°C  
NUMBER  
MARKING  
VOLTS  
MAX  
VOLTS  
MIN  
µA  
pF  
MAX  
7.0  
MAX  
9.0  
11  
MAX  
TYP  
MAX  
-5  
SMDA03C-4-2  
SMDA05C-4-2  
SMDA12C-4-2  
SMDA15C-4-2  
SMDA24C-4-2  
RFA  
RFB  
RFC  
RFD  
RFE  
3.3  
5.0  
4
200  
40  
1
300  
200  
75  
6.0  
9.8  
1
12.0  
15.0  
24.0  
13.3  
16.7  
26.7  
19.0  
24.0  
43.0  
24  
8
30  
1
50  
13  
28  
55  
1
35  
NOTE: TVS product is normally selected based on its stand off Voltage VWM. Product selected voltage  
should be equal to or greater than the continuous peak operating voltage of the circuit to be protected.  
Application: The SMDAXXC-4-2 product is designed for transient voltage suppression protection of ESD  
sensitive components at the board level. It is an ideal product to be used for protection of I/O Transceivers.  
MSC0887.PDF  
ISO 9001 CERTIFIED  
REV J 7/06/2000  
12

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SMDA12C-4-2/TR13 替代型号

型号 品牌 替代类型 描述 数据表
SMDA12C-4/TR7 MICROSEMI

类似代替

 Trans Voltage Suppressor Diode, 300W, 12V V(RWM), Bidirectional, 4 Element, Silicon, PLAST
SMDA12C-4/TR13 MICROSEMI

类似代替

 Trans Voltage Suppressor Diode, 300W, 12V V(RWM), Bidirectional, 4 Element, Silicon, PLAST

与SMDA12C-4-2/TR13相关器件

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SMDA12C-4-2/TR7 MICROSEMI

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 		Trans Voltage Suppressor Diode, 300W, 12V V(RWM), Bidirectional, 4 Element, Silicon, PLAST
SMDA12C-4-2E3/TR7 MICROSEMI

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 		Trans Voltage Suppressor Diode, 300W, 12V V(RWM), Bidirectional, 4 Element, Silicon, PLAST
SMDA12C-4-2-G SENSITRON

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 		Trans Voltage Suppressor Diode, 500W, 12V V(RWM), Bidirectional, 5 Element, Silicon, LEAD
SMDA12C-4-2TR ETC

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 		TVS DIODE 12V 19V 8SO
SMDA12C-4-2-TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 300W, 12V V(RWM), Bidirectional, 4 Element, Silicon, PLAST
SMDA12C-4E3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 300W, 12V V(RWM), Bidirectional, 4 Element, Silicon, PLAST
SMDA12C-4E3/TR13 MICROSEMI

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 		Trans Voltage Suppressor Diode, 300W, 12V V(RWM), Bidirectional, 4 Element, Silicon, PLAST
SMDA12C-4E3/TR7 MICROSEMI

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 		Trans Voltage Suppressor Diode, 300W, 12V V(RWM), Bidirectional, 4 Element, Silicon, PLAST
SMDA12C-4-G SENSITRON

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 		Trans Voltage Suppressor Diode, 300W, 12V V(RWM), Bidirectional, 4 Element, Silicon, LEAD
SMDA12C-5 MICROSEMI

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 		TVSarray Series

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