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SMCGLCE51ATRE3

更新时间: 2024-11-24 09:31:31
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
4页 226K
描述
Trans Voltage Suppressor Diode, 51V V(RWM), Unidirectional,

SMCGLCE51ATRE3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.55
击穿电压标称值:59.7 V最大钳位电压:82.4 V
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE极性:UNIDIRECTIONAL
最大重复峰值反向电压:51 V子类别:Transient Suppressors
表面贴装:YES

SMCGLCE51ATRE3 数据手册

 浏览型号SMCGLCE51ATRE3的Datasheet PDF文件第2页浏览型号SMCGLCE51ATRE3的Datasheet PDF文件第3页浏览型号SMCGLCE51ATRE3的Datasheet PDF文件第4页 
SMCGLCE6.5 thru SMCGLCE170A, e3  
SMCJLCE6.5 thru SMCJLCE170A, e3  
1500 WATT LOW CAPACITANCE  
SURFACE MOUNT TRANSIENT  
VOLTAGE SUPPRESSOR  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This surface mount Transient Voltage Suppressor (TVS) product family includes a  
rectifier diode element in series and opposite direction to achieve low capacitance  
below 100 pF. They are also available as RoHS Compliant with an e3 suffix. The low  
TVS capacitance may be used for protecting higher frequency applications in inductive  
switching environments or electrical systems involving secondary lightning effects per  
IEC61000-4-5 as well as RTCA/DO-160D or ARINC 429 for airborne avionics. They  
also protect from ESD and EFT per IEC61000-4-2 and IEC61000-4-4. If bipolar  
transient capability is required, two of these low capacitance TVS devices may be used  
in parallel and opposite directions (anti-parallel) for complete ac protection (Figure 6).  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
Available in standoff voltage range of 6.5 to 200 V  
Low capacitance of 100 pF or less  
1500 Watts of Peak Pulse Power at 10/1000 μs  
Low capacitance for data line protection to 1 MHz  
Molding compound flammability rating: UL94V-O  
Protection for aircraft fast data rate lines up to  
Level 5 Waveform 4 and Level 2 Waveform 5A in  
RTCA/DO-160D (also see MicroNote 130) &  
ARINC 429 with bit rates of 100 kb/s (per ARINC  
429, Part 1, par 2.4.1.1)  
Two different terminations available in C-bend (modified J-  
Bend with DO-214AB) or Gull-wing (DO-215AB)  
Options for screening in accordance with MIL-PRF-19500  
for JAN, JANTX, and JANTXV are available by adding MQ,  
MX, or MV prefixes respectively to part numbers  
IEC61000-4-2 ESD 15 kV (air), 8 kV (contact)  
IEC61000-4-5 (Lightning) as further detailed in  
LCE6.5 thru LCE170A data sheet  
Optional 100% screening for avionics grade is available by  
adding MA prefix to part number for 100% temperature  
cycle –55ºC to 125ºC (10X) as well as surge (3X) and 24  
hours HTRB with post test VBR & IR  
T1/E1 Line Cards  
Base Stations, WAN & XDSL Interfaces  
CSU/DSU Equipment  
RoHS Compliant devices available by adding an “e3” suffix  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
CASE: Molded, surface mountable  
1500 Watts of Peak Pulse Power dissipation at 25oC with  
repetition rate of 0.01% or less*  
TERMINALS: Gull-wing or C-bend (modified J-  
bend) tin-lead or RoHS compliant annealed  
matte-tin plating solderable per MIL-STD-750,  
method 2026  
Clamping Factor: 1.4 @ Full Rated power  
1.30 @ 50% Rated power  
tclamping (0 volts to V(BR) min): Less than 5x10-9 seconds  
Operating and Storage temperatures: -65 to +150oC  
Steady State power dissipation: 5.0W @ TL = 50oC  
POLARITY: Cathode indicated by band  
MARKING: Part number with abbreviated prefix  
(CLC6.5A, CLC6.5Ae3, CLC33, CLC33e3, etc.)  
THERMAL RESISTANCE: 20oC/W (typical junction to  
lead (tab) at mounting plane  
TAPE & REEL option: Standard per EIA-481-B  
with 16 mm tape, 750 per 7 inch reel or 2500 per  
13 inch reel (add “TR” suffix to part number)  
* When pulse testing, do not pulse in opposite direction  
(see “Schematic Applications” section herein and  
Figures 5 & 6 for further protection in both directions)  
ELECTRICAL CHARACTERISTICS @ 25oC  
Maximum Maximum  
Reverse  
IIB  
VWIB  
VPIB  
Peak  
Inverse  
Blocking  
Voltage  
Volts  
MICROSEMI  
Part Number  
MICROSEMI  
Part Number  
Maximum  
Capacitance Working  
@ 0 Volts,  
f = 1 MHz  
Breakdown Voltage  
Reverse  
Leakage  
Clamping  
Voltage  
Stand-Off  
Voltage  
Maximum  
Peak Pulse  
Inverse  
Blocking  
Leakage  
Current  
μA  
VBR @ I(BR)  
Inverse  
Blocking  
Voltage  
Volts  
@VWM  
@IPP  
VC  
VWM  
Current IPP  
@10/1000  
Amps  
Gull-Wing  
“G”  
Modified  
“J”  
Volts  
ID  
Bend Lead  
Bend Lead  
Volts  
Volts  
pF  
μA  
1000  
1000  
500  
500  
250  
250  
100  
100  
50  
MIN  
7.22  
7.22  
7.78  
7.78  
8.33  
8.33  
8.89  
8.89  
9.44  
9.44  
10.0  
10.0  
MAX  
8.82  
7.98  
9.51  
8.60  
10.2  
9.21  
10.9  
9.83  
11.5  
10.4  
12.2  
11.1  
mA  
10  
10  
10  
10  
10  
10  
1
1
1
1
1
SMCGLCE6.5  
SMCGLCE6.5A  
SMCGLCE7.0  
SMCGLCE7.0A  
SMCGLCE7.5  
SMCGLCE7.5A  
SMCGLCE8.0  
SMCGLCE8.0A  
SMCGLCE8.5  
SMCGLCE8.5A  
SMCGLCE9.0  
SMCGLCE9.0A  
SMCJLCE6.5  
SMCJLCE6.5A  
SMCJLCE7.0  
SMCJLCE7.0A  
SMCJLCE7.5  
SMCJLCE7.5A  
SMCJLCE8.0  
SMCJLCE8.0A  
SMCJLCE8.5  
SMCJLCE8.5A  
SMCJLCE9.0  
SMCJLCE9.0A  
6.5  
6.5  
7.0  
7.0  
7.5  
7.5  
8.0  
8.0  
8.5  
8.5  
9.0  
9.0  
12.3  
11.2  
13.3  
12.0  
14.3  
12.9  
15.0  
13.6  
15.9  
14.4  
16.9  
15.4  
100  
100  
100  
100  
100  
100  
100  
100  
94  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
75  
75  
75  
75  
75  
75  
75  
75  
75  
75  
75  
75  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
50  
10  
10  
100  
89  
97  
1
Copyright © 2007  
6-21-2007 REV H  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

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