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SMCG85A-HR PDF预览

SMCG85A-HR

更新时间： 2024-11-16 21:07:07
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网光电二极管
页数 文件大小 规格书
6页 1146K
描述
Trans Voltage Suppressor Diode, 1500W, 85V V(RWM), Unidirectional, 1 Element, Silicon, DO-215AB, SMCG, 2 PIN

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中文翻译

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SMCG85A-HR 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：R-PDSO-L2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.67其他特性：EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, UL RECOGNIZED
最大击穿电压：104 V最小击穿电压：94.4 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-215AB
JESD-30 代码：R-PDSO-L2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值反向功率耗散：1500 W
元件数量：1端子数量：2
最高工作温度：150 °C最低工作温度：-65 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性：UNIDIRECTIONAL
最大功率耗散：6.5 W参考标准：IEC-61000-4-2; IEC-61000-4-4
最大重复峰值反向电压：85 V表面贴装：YES
技术：AVALANCHE端子面层：Matte Tin (Sn)
端子形式：L BEND端子位置：DUAL
Base Number Matches：1

SMCG85A-HR 数据手册

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•ꢀ  
                                                                
•ꢀ  
                                                                
                                                                                      
Whiskerꢀtestꢀisꢀconductedꢀ •ꢀ  
MeetꢀMSLꢀlevel1,ꢀperꢀ  
J-STD-020,ꢀLFꢀmaximunꢀ  
peakꢀofꢀ260°C  
•ꢀ  
                                                                
IEC-61000-4-2ꢀESDꢀ  
15kV(Air),ꢀ8kVꢀ(Contact)  
ESDꢀprotectionꢀofꢀdataꢀ  
lines in accordance with  
IECꢀ61000-4-2ꢀ(IEC801-2)  
•ꢀ  
                                                                
•ꢀ High-Reliabilityꢀup-  
screened for critical  
applicationsꢀrequireꢀhigherꢀ  
reliabilityꢀperformanceꢀ  
andꢀlowꢀinfantꢀmortalityꢀ  
failures.  
•ꢀ Excellentꢀclampingꢀ  
capability  
•ꢀ Lowꢀincrementalꢀsurgeꢀ  
•ꢀ  
                                                                                      
EFTꢀprotectionꢀofꢀdataꢀ  
lines in accordance with  
IECꢀ61000-4-4ꢀ(IEC801-4)  
TransientVoltage Suppression Diodes  
Surface Mount – 1500W > SMCG-HR series  
Pb e3  
RoHS  
SMCG-HR Series  
Description  
TheꢀSMCG-HRꢀseriesꢀisꢀdesignedꢀspecificallyꢀtoꢀprotectꢀ  
sensitiveꢀelectronicꢀequipmentꢀfromꢀvoltageꢀtransientsꢀ  
inducedꢀbyꢀlightningꢀandꢀotherꢀtransientꢀvoltageꢀevents.  
Features  
•ꢀ Built-inꢀstrainꢀrelief  
•ꢀ Fastꢀresponseꢀtime:ꢀ  
typicallyꢀlessꢀthanꢀ1.0psꢀ  
fromꢀ0VꢀtoꢀBVꢀmin  
•ꢀ 1500Wꢀpeakꢀpulseꢀpowerꢀ  
capabilityꢀatꢀ10/1000μs  
waveform, repetition rate  
(dutyꢀcycles):0.01%  
Agency Approvals  
AGENCY  
AGENCY FILE NUMBER  
E230531  
resistance  
•ꢀ TypicalꢀIR less than 1µA  
above 12V  
•ꢀ VBR @TJ= VBR@25°Cꢀxꢀ(1+αT  
xꢀ(TJ -ꢀ25))ꢀ(αT:Temperatureꢀ  
Coefficient,ꢀtypicalꢀvalueꢀisꢀ  
0.1%)  
•ꢀ Forꢀsurfaceꢀmountedꢀ  
applications to optimize  
board space  
Maximum Ratings andThermal Characteristics  
(TA=25OC unless otherwise noted)  
•ꢀ Lꢀbendꢀleadꢀformingꢀgivesꢀ •ꢀ Glassꢀpassivatedꢀchipꢀ  
Parameter  
Symbol  
Value  
Unit  
bestꢀsolderbilityꢀforꢀHiꢀ  
reliabilityꢀapplication  
Typicalꢀfailureꢀmodeꢀisꢀ  
shortꢀfromꢀover-specifiedꢀ  
voltageꢀorꢀcurrentꢀ  
junction  
PeakꢀPulseꢀPowerꢀDissipationꢀatꢀ  
TA=25ºC byꢀ10/1000µsꢀwaveformꢀ  
(Fig.2)(Noteꢀ1),ꢀ(Noteꢀ2)ꢀ  
•ꢀ Highꢀtemperatureꢀ  
solderingꢀguaranteed:ꢀ  
260°C/10ꢀsecondsꢀatꢀ  
terminals  
PPPM  
1500  
W
PowerꢀDissipationꢀonꢀinfiniteꢀheatꢀ  
PM(AV)  
IFSM  
6.5  
W
sinkꢀatꢀTA=50OC  
PeakꢀForwardꢀSurgeꢀCurrent,ꢀ8.3msꢀ  
SingleꢀHalfꢀSineꢀWaveꢀ(Noteꢀ3)  
200  
A
basedꢀonꢀJEDECꢀ  
JESD201Aꢀperꢀitsꢀtableꢀ4aꢀ  
andꢀ4c  
MaximumꢀInstantaneousꢀForwardꢀ  
Voltageꢀatꢀ100AꢀforꢀUnidirectionalꢀ  
onlyꢀ  
VF  
3.5  
V
•ꢀ Matteꢀtinꢀlead–freeꢀplated  
•ꢀHalogenꢀfreeꢀ  
•ꢀRoHSꢀcompliantꢀwithꢀ  
exemptionꢀ7aꢀandꢀ7c-I  
OperatingꢀJunctionꢀandꢀStorageꢀ  
TemperatureꢀRange  
TJ, TSTG -65ꢀtoꢀ150  
°C  
TypicalꢀThermalꢀResistanceꢀJunctionꢀ  
toꢀLead  
RuJL  
RuJA  
15  
°C/W  
°C/W  
•ꢀ2ndꢀlevelꢀinterconnectꢀisꢀ  
Pb-freeꢀperꢀIPC/JEDECꢀ  
J-STD-609A.01  
TypicalꢀThermalꢀResistanceꢀJunctionꢀ  
to Ambient  
75  
Notes:  
Applications  
TVS devices are ideal for the protection of I/O Interfaces,  
1.ꢀNon-repetitiveꢀcurrentꢀpulseꢀ,ꢀperꢀFig.ꢀ4ꢀandꢀderatedꢀaboveꢀTA = 25OCꢀperꢀFig.ꢀ3.  
2.ꢀMountedꢀonꢀcopperꢀpadꢀareaꢀofꢀ0.31x0.31”ꢀ(8.0ꢀxꢀ8.0mm)ꢀtoꢀeachꢀterminal.  
3.ꢀMeasuredꢀonꢀ8.3msꢀsingleꢀhalfꢀsineꢀwaveꢀorꢀequivalentꢀsquareꢀwaveꢀforꢀunidirectionalꢀ  
deviceꢀonly,ꢀdutyꢀcycle=4ꢀperꢀminuteꢀmaximum.  
VCC bus and other vulnerable circuits used inTelecom,  
Computer, Industrial and Consumer electronic applications.  
Functional Diagram  
Bi-directional  
Cathode  
Anode  
Uni-directional  
©2015 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 11/09/15  
123456

中文翻译

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