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SMCG5665AE3/TR13 PDF预览

SMCG5665AE3/TR13

更新时间： 2024-11-20 08:26:39
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
3页 170K
描述
Trans Voltage Suppressor Diode, 1500W, 171V V(RWM), Unidirectional, 1 Element, Silicon, DO-215AB, PLASTIC PACKAGE-2

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SMCG5665AE3/TR13 技术参数

是否Rohs认证： 符合生命周期：Active
零件包装代码：DO-215AB包装说明：R-PDSO-G2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.78其他特性：HIGH RELIABILITY
最大击穿电压：210 V最小击穿电压：190 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-215AB
JESD-30 代码：R-PDSO-G2JESD-609代码：e3
最大非重复峰值反向功率耗散：1500 W元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性：UNIDIRECTIONAL
最大功率耗散：5 W认证状态：Not Qualified
最大重复峰值反向电压：171 V表面贴装：YES
技术：AVALANCHE端子面层：MATTE TIN
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：40Base Number Matches：1

SMCG5665AE3/TR13 数据手册

 浏览型号SMCG5665AE3/TR13的Datasheet PDF文件第2页浏览型号SMCG5665AE3/TR13的Datasheet PDF文件第3页 
SMCG5629 thru SMCG5665A, e3  
and SMCJ5629 thru SMCJ5665A, e3  
TRANSIENT VOLTAGE SUPPRESSORS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
These surface mount Transient Voltage Suppressors (TVSs) are used for protecting  
sensitive components requiring low clamping voltage levels. They are rated at high  
current impulses typically generated by inductive switching transients. They are also  
optionally available as RoHS Compliant (annealed matte-Tin finish) with an e3 suffix  
added to the part number. Other benefits are achieved with low-profile surface mount  
J-bend or Gull-wing terminals for stress-relief and lower weight. Its low-flat profile  
provides easier insertion or automatic handling benefits compared to other MELF style  
packages. Options for screening to avionics grade with MA prefix or similar to JAN,  
JANTX, JANTXV, and JANS by using MQ, MX, MV or MSP respectively for part  
number prefixes for screening in accordance with MIL-PRF-19500/500.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
Reliability data per JESD22-A108, JESD22-A104  
JESD22-A113-B, JESD22-A101-B, and JESD22-A102  
Thermally efficient surface mount with J-bends or Gull  
wings termination for stress relief (flat handling surface  
and easier placement)  
•
•
•
Working Standoff Voltages: 5.5 volts to 171 volts  
Metallurgically bonded  
For high reliability transient voltage suppression in  
low profile surface mount locations requiring easy  
placement and strain relief  
•
•
Optional 100% screening for avionics grade available by  
adding MA prefix to part number for added 100%  
temperature cycle -55°C to +125°C (10X), surge (3X), 24  
hours HTRB and post test (VBR and ID)  
•
Light weight for airborne or satellite applications  
• Superior surge quality to protect from ESD and EFT  
transients per IEC61000-4-2 and -4-4  
•
•
Lightning surge protection per IEC61000-4-5 for  
Class 1 and 2 with source impedance of 42 Ohms as  
well as Class 3 and 4 selectively at lower voltages  
(VWM) and higher surge current (IPP) ratings herein  
Options for screening in accordance with MIL-PRF-  
19500/500 for JAN, JANTX, and JANTXV are available  
by adding MQ, MX, or MV prefixes respectively to part  
numbers. For example, designate a MXSMCJ5629A for  
a JANTX screen.  
Protects sensitive components such as ICs, CMOS,  
Bipolar, BiCMOS, ECL, DTL, T2L, etc.  
•
RoHS Compliant devices available by adding “e3” suffix  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
•
Operating temperature: -55°C to +150°C  
Storage temperature: -55°C to +150°C  
• Molded epoxy package meets UL94V-0  
• Terminals: Tin-Lead or RoHS Compliant annealed  
matte-Tin plating solderable per MIL-STD-750,  
method 2026  
• Body marked with P/N without SMCJ or SMCG letters  
(ie. 5629A, 5640, 5655A, 5662, 5665A, etc.)  
• Cathode indicated by band  
• Weight: 0.25 grams (approximate)  
• Tape & Reel packaging per EIA-481  
(2500 units/reel)  
1500 Watts of Peak Pulse Power at 10/1000 µs as shown  
in Figure 3 (see Figure 1 for other tP values)  
Thermal resistance: 20°C/W Junction to Lead  
Impulse repetition rate (duty factor): 0.01%  
5.0 Watt steady-state maximum power at TL =25°C  
•
•
•
•
•
•
t
clamping (0V to V(BR) min): 50 picoseconds max (theoretical)  
Forward voltage VF @ 100 Amps 8.3 ms: 3.5 V max.  
Solder Temperature: 260 °C for 10 s maximum  
ELECTRICAL CHARACTERISTICS @ 25oC  
MICROSEMI  
Part Number  
MICROSEMI  
Part Number  
Breakdown  
Voltage*  
Rated  
Standoff  
Voltage  
Maximum  
Standby  
Current  
Test  
Maximum Peak  
Reverse Voltage  
Maximum Peak  
Pulse Current  
(VBR  
MIN. MAX.  
)
Current  
Modified  
“G”  
Modified  
“J”  
(I(BR)  
mAdc  
10  
)
(VWM  
)
(ID at VWM  
)
(VC max. at IPP  
)
(IPP  
)
Vdc  
Vdc  
7.48  
7.14  
8.25  
7.88  
9.02  
8.61  
10.0  
9.55  
11.0  
10.5  
12.1  
11.6  
V
μAdc  
1000  
1000  
500  
500  
200  
200  
50  
V
A
Bend Lead  
SMCG5629  
SMCG5629A  
SMCG5630  
SMCG5630A  
SMCG5631  
SMCG5631A  
SMCG5632  
SMCG5632A  
SMCG5633  
SMCG5633A  
SMCG5634  
SMCG5634A  
Bend Lead  
SMCJ5629  
SMCJ5629A  
SMCJ5630  
SMCJ5630A  
SMCJ5631  
SMCJ5631A  
SMCJ5632  
SMCJ5632A  
SMCJ5633  
SMCJ5633A  
SMCJ5634  
SMCJ5634A  
6.12  
6.45  
6.75  
7.13  
7.38  
7.79  
8.19  
8.65  
9.00  
9.5  
5.50  
5.80  
6.05  
6.40  
6.63  
7.02  
7.37  
7.78  
8.10  
8.55  
8.92  
9.40  
10.8  
10.5  
11.7  
11.3  
12.5  
12.1  
13.8  
13.4  
15.0  
14.5  
16.2  
15.6  
139  
143  
128  
132  
120  
124  
109  
112  
100  
103  
93  
10  
10  
10  
10  
10  
1
1
1
1
1
50  
10  
10  
5
9.9  
10.5  
1
5
96  
Copyright © 2007  
6-21-2007 REV D  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

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