Datasheet > SMCG58AHE3/9AT

SMCG58AHE3/9AT

更新时间： 2024-11-19 22:51:11

品牌	Logo	应用领域
威世 - VISHAY		电视
页数	文件大小	规格书
5页	89K
描述
TVS DIODE 58V 93V DO215AB

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替代型号

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SMCG58AHE3/9AT 数据手册

SMCG5.0A thru SMCG188CA

www.vishay.com

Vishay General Semiconductor

Surface Mount TRANSZORB

Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available in uni-directional and bi-directional

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

SMCG (DO-215AB)

• AEC-Q101 qualified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

TYPICAL APPLICATIONS

V_BRuni-directional

6.40 V to 231 V

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, automotive, and telecommunication.

V_BRbi-directional

6.40 V to 231 V

5.0 V to 188 V

1500 W

V_WM

P_PPM

P_D

6.5 W

MECHANICAL DATA

I_FSM(uni-directional only)

200 A

Case: SMCG (DO-215AB)

Molding compound meets UL 94 V-0 flammability rating

T_Jmax.

150 °C

Base P/N-E3

RoHS compliant, industrial grade

Polarity

Uni-directional, bi-directional

SMCG (DO-215AB)

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

Package

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional devices use CA suffix (e.g. SMCG188CA).

Electrical characteristics apply in both directions.

Polarity: for uni-directional types the band denotes cathode

end, no marking on bi-directional types

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

VALUE

1500

UNIT

Peak pulse power dissipation with a 10/1000 μs waveform ⁽¹⁾⁽²⁾

Peak pulse current with a 10/1000 μs waveform ⁽¹⁾

Peak forward surge current 8.3 ms single half sine-wave uni-directional only ⁽²⁾

Power dissipation on infinite heatsink, T_A= 50 °C

I_PPM

See next table

200

I_FSM

P_D

6.5

Operating junction and storage temperature range

T_J, T_STG

-55 to +150

°C

Notes

(1)

Non-repetitive current pulse, per fig. 3 and derated above T_A= 25 °C per fig. 2

Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads to each terminal

(2)

Revision: 16-Jan-18

Document Number: 88457

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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SMCG58AHE3/9AT 替代型号

型号	品牌	替代类型	描述	数据表
SMCG58A-E3/9AT	VISHAY	完全替代	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB, ROHS COMPLIANT, PLASTIC, SMCG,
SMCG58A-E3/57T	VISHAY	完全替代	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB, ROHS COMPLIANT, PLASTIC, SMCG,

与SMCG58AHE3/9AT相关器件

型号	品牌	获取价格	描述	数据表
SMCG58A-HR	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 1500W, 58V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMCG58A-HRA	LITTELFUSE	获取价格	TVS DIODE 58V 93.6V DO215AB
SMCG58ATRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 58V V(RWM), Unidirectional
SMCG58C	VISHAY	获取价格	Trans Voltage Suppressor Diode, 58V V(RWM), Bidirectional,
SMCG58C	MICROSEMI	获取价格	SURFACE MOUNT 1500 Watt Transient Voltage Suppressor
SMCG58C/9AT	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 58V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMCG58CA	MICROSEMI	获取价格	SURFACE MOUNT 1500 Watt Transient Voltage Suppressor
SMCG58CA/57	VISHAY	获取价格	Trans Voltage Suppressor Diode, 58V V(RWM), Bidirectional,
SMCG58CA/57T-E3	VISHAY	获取价格	DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB, PLASTIC, SMCG, 2 PIN, Transient
SMCG58CAE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 58V V(RWM), Bidirectional, 1 Element, Silicon, DO-2

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