Datasheet > SMBJ8.0CA-HR

SMBJ8.0CA-HR

更新时间： 2023-09-24 09:15:04

品牌	Logo	应用领域
力特 - LITTELFUSE		脉冲瞬态抑制二极管
页数	文件大小	规格书
6页	874K
描述
SMBJ HR系列高可靠性瞬态抑制二极管是经升级筛选的Littelfuse即用型高可靠性瞬态抑制二极管。它采用紧凑的DO-214AA SMB封装，额定脉冲峰值功率耗损为600W。这些元件经过特

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数据手册

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SMBJ8.0CA-HR 数据手册

TVS Diode

Surface Mount – 600W > SMBJ-HR series

Ratings and Characteristic Curves (T_A=25°C unless otherwise noted)

Figure 1 -TVSTransients ClampingWaveform

Figure 2 - Peak Pulse Power Rating

Voltage Transients

100

Voltage Across TVS

Current Through TVS

0.2x0.2" (5.0x5.0mm)

Copper Pad Area

0.1

0.001

0.01

0.1

Time

t_d-Pulse Width (ms.)

Figure 3 - Pulse Derating Curve

Figure 4 - PulseWaveform

100

150

t =10µsec

=25°C

Pulse Width(td) is deﬁned

as the point where the peak

current decays to 50% of I

PPM

Peak Value

100

PPM

Half Value

PPM

( )

10/1000µsec. Waveform

as deﬁned by R.E.A

100 125 150

175

1.0

2.0

t-Time (ms)

3.0

4.0

T_J- Initial Junction Temperature (ºC)

Figure 5 -Typical Junction Capacitance

Figure 6 - Steady State Power Dissipation Derating Curve

100000

Uni-di

onal V=0V

Bi-direc nal V=0V

10000

1000

100

Uni-di

Bi-direc nal

V=V_R

onal

100

1000

100

125

150

175

V_BR- Reverse Breakdown Voltage (V)

T_A- Ambient Temperature (ºC)

Speciﬁcations are subject to change without notice.

Revised: 04/06/20

1 2 345 6

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