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SMBJ64A-E3/52 PDF预览

SMBJ64A-E3/52

更新时间： 2024-02-04 00:25:55
品牌 Logo 应用领域
威世 - VISHAY 局域网PC光电二极管电视
页数 文件大小 规格书
5页 90K
描述
DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN, Transient Suppressor

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SMBJ64A-E3/52 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：DO-214AA
包装说明：R-PDSO-C2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：0.73
Samacsys Confidence：4Samacsys Status：Released
Samacsys PartID：1867038Samacsys Pin Count：2
Samacsys Part Category：TVS Diode (Uni-directional)Samacsys Package Category：Diodes Moulded
Samacsys Footprint Name：DO-214AA (SMB)Samacsys Released Date：2017-12-15 11:59:34
Is Samacsys：N其他特性：EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
最大击穿电压：78.6 V最小击穿电压：71.1 V
击穿电压标称值：74.85 V最大钳位电压：103 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-214AA
JESD-30 代码：R-PDSO-C2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值反向功率耗散：600 W
元件数量：1端子数量：2
最高工作温度：150 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性：UNIDIRECTIONAL认证状态：Not Qualified
最大重复峰值反向电压：64 V子类别：Transient Suppressors
表面贴装：YES技术：AVALANCHE
端子面层：Matte Tin (Sn)端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：30
Base Number Matches：1

SMBJ64A-E3/52 数据手册

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SMBJ5.0A thru SMBJ188A  
Vishay General Semiconductor  
www.vishay.com  
®
Surface Mount TRANSZORB  
Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in uni-directional and bi-directional  
• 600 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate (duty  
cycle): 0.01 %  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
DO-214AA (SMB J-Bend)  
• AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
PRIMARY CHARACTERISTICS  
VBR (bi-directional)  
6.4 V to 231 V  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, and telecommunication.  
VBR (uni-directional)  
6.4 V to 231 V  
5.0 V to 188 V  
600 W  
VWM  
PPPM  
I
FSM (uni-directional only)  
100 A  
MECHANICAL DATA  
TJ max.  
150 °C  
Case: DO-214AA (SMBJ)  
Molding compound meets UL 94 V-0 flammability rating  
Polarity  
Uni-directional, bi-directional  
DO-214AA (SMBJ)  
Package  
Base P/N-E3  
-
RoHS-compliant, commercial grade  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
DEVICES FOR BI-DIRECTION APPLICATIONS  
For bi-directional devices use CA suffix (e.g. SMBJ10CA).  
Electrical characteristics apply in both directions.  
Polarity: For uni-directional types the band denotes  
cathode end, no marking on bi-directional types  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
VALUE  
600  
UNIT  
W
Peak pulse power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)  
Peak pulse current with a 10/1000 μs waveform (1)  
IPPM  
See next table  
100  
A
(2)  
Peak forward surge current 8.3 ms single half sine-wave uni-directional only  
Operating junction and storage temperature range  
IFSM  
A
TJ, TSTG  
- 55 to + 150  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2.  
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal  
(2)  
Revision: 06-Feb-14  
Document Number: 88392  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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