Datasheet > SMBJ5937DE3

SMBJ5937DE3

更新时间： 2024-11-21 13:44:51

品牌	Logo	应用领域
美高森美 - MICROSEMI		测试光电二极管
页数	文件大小	规格书
4页	425K
描述
Zener Diode, 33V V(Z), 1%, 1.25W, Silicon, Unidirectional, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

SMBJ5937DE3 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	DO-214AA
包装说明：	R-PDSO-C2	针数：	2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.71
Is Samacsys：	N	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	ZENER DIODE
最大动态阻抗：	33 Ω	JEDEC-95代码：	DO-214AA
JESD-30 代码：	R-PDSO-C2	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	1
端子数量：	2	最高工作温度：	150 °C
最低工作温度：	-65 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	UNIDIRECTIONAL
最大功率耗散：	1.25 W	认证状态：	Not Qualified
标称参考电压：	33 V	子类别：	Voltage Reference Diodes
表面贴装：	YES	技术：	ZENER
端子面层：	Matte Tin (Sn)	端子形式：	C BEND
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
最大电压容差：	1%	工作测试电流：	11.4 mA
Base Number Matches：	1

SMBJ5937DE3 数据手册

SMBG5913 thru SMBG5956B, e3

SMBJ5913 thru SMBJ5956B, e3

SILICON 2.0 Watt ZENER DIODES

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

The SMBJ5913-5956B or SMBG5913-5956B series of surface mount 2.0

watt Zeners provides voltage regulation in a selection from 3.3 to 200

volts with different tolerances as identified by suffix letter on the part

number. This series is equivalent to the JEDEC registered 1N5913 thru

1N5956B with identical electrical characteristics except it is rated at 2.0 W

instead of 1.5 W with the lower thermal resistance features of the surface

mount packaging. It is available in J-bend design (SMBJ) with the DO-

214AA package for greater PC board mounting density or in Gull-wing

design (SMBG) in the DO-215AA for visible solder connections. It is also

available as RoHS Compliant with an e3 suffix. Microsemi also offers

numerous other Zener products to meet higher and lower power

NOTE: All SMB series are

equivalent to prior SMS package

identifications.

applications.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

• Surface mount equivalent to 1N5913 to 1N5956B

• Ideal for high-density and low-profile mounting

• Zener voltage available 3.3V to 200V

•

Regulates voltage over a broad operating

current and temperature range

•

Wide selection from 3.3 to 200 V

Popular DO-214AA or DO-215AA packages

and footprints for either high density J-bend or

Gull-wing designs for visible solder joints

• Standard voltage tolerances are plus/minus 5% with

B suffix and 10 % with A suffix identification

• Tight tolerances available in plus or minus 2% or 1%

•

Nonsensitive to ESD per MIL-STD-750 Method

1020

with C or D suffix respectively

• Options for screening in accordance with MIL-PRF-19500

for JAN, JANTX, and JANTXV are available by adding MQ,

MX, or MV prefixes respectively to part numbers.

•

Withstands high surge stresses (see Figure 2)

Moisture classification: Level 1 per IPC/JEDEC

J-STD-020B with no dry pack required

• RoHS Compliant devices available by adding an “e3” suffix

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Power dissipation at 25^ºC: 2.0 watts (also see

derating in Figure 1).

• CASE: Void-free transfer molded

thermosetting epoxy body meeting UL94V-0

Operating and Storage temperature: -65^ºC to

• TERMINALS: Gull-wing or C-bend (modified

J-bend) tin-lead or RoHS compliant annealed

matte-Tin plating solderable per MIL-STD-750,

method 2026

+150^ºC

Thermal Resistance: 35 ^ºC/W junction to lead, or

100^ºC/W junction to ambient when mounted on FR4

PC board (1oz Cu) with recommended footprint (see

last page)

• POLARITY: Cathode indicated by band.

Diode to be operated with banded end positive

with respect to opposite end for Zener

regulation

•

Steady-State Power: 2 watts at T_L< 80^oC, or 1.25

watts at T_A= 25^ºC when mounted on FR4 PC board

with recommended footprint (also see Figure 1)

• MARKING: Includes part number without

prefix (e.g. 5913B, 5913Be3, 5948C, 5956D,

etc.)

•

Forward voltage @200 mA: 1.2 volts (maximum)

Solder Temperatures: 260 ^ºC for 10 s (maximum)

• TAPE & REEL option: Standard per EIA-481-1-

A with 12 mm tape, 750 per 7 inch reel or 2500

per 13 inch reel (add “TR” suffix to part number)

• WEIGHT: 0.1 grams

• See package dimensions on last page

6-21--2007 REV H

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

中文翻译

下载PDF

与SMBJ5937DE3相关器件

型号	品牌	获取价格	描述	数据表
SMBJ5937DE3/TR13	MICROSEMI	获取价格	Zener Diode, 33V V(Z), 1%, 2W,
SMBJ5937DTR	MICROSEMI	获取价格	暂无描述
SMBJ5937E3	MICROSEMI	获取价格	Zener Diode, 33V V(Z), 20%, 1.25W, Silicon, Unidirectional, DO-214AA, ROHS COMPLIANT, PLAS
SMBJ5937E3/TR13	MICROSEMI	获取价格	Zener Diode, 33V V(Z), 20%, 2W,
SMBJ5937TR	MICROSEMI	获取价格	Zener Diode, 33V V(Z), 20%, 1.25W, Silicon, Unidirectional, DO-214AA, PLASTIC, SMBJ, 2 PIN
SMBJ5937TRE3	MICROSEMI	获取价格	Zener Diode, 33V V(Z), 20%, 2W
SMBJ5938	MCC	获取价格	Silicon Zener Diode 3.0 Watt
SMBJ5938	GOOD-ARK	获取价格	1.5W SILICON SURFACE MOUNT ZENER DIODES
SMBJ5938	MICROSEMI	获取价格	SILICON 1.5 WATT ZENER DIODES SURFACE MOUNT
SMBJ5938A	GOOD-ARK	获取价格	1.5W SILICON SURFACE MOUNT ZENER DIODES

与SMBJ5937DE3相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

30
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

22
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

51
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

49

产品中心

服务支持

精选活动

关于我们

帮助中心

SMBJ5937DE3

SMBJ5937DE3 技术参数

SMBJ5937DE3 数据手册

与SMBJ5937DE3相关器件

与SMBJ5937DE3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SMBJ5937DE3

SMBJ5937DE3 技术参数

SMBJ5937DE3 数据手册

与SMBJ5937DE3相关器件

与SMBJ5937DE3相关文章

您还可以找

您在本页遇到什么问题？