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SMBJ51 PDF预览

SMBJ51

更新时间: 2024-01-14 13:20:28
品牌 Logo 应用领域
鲁光 - LGE 二极管
页数 文件大小 规格书
4页 2524K
描述
暂无描述

SMBJ51 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AA
包装说明:PLASTIC PACKAGE-2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.61
最大击穿电压:69.3 V最小击穿电压:56.7 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
最大非重复峰值反向功率耗散:600 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):265极性:BIDIRECTIONAL
最大功率耗散:5 W认证状态:Not Qualified
表面贴装:YES技术:AVALANCHE
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SMBJ51 数据手册

 浏览型号SMBJ51的Datasheet PDF文件第2页浏览型号SMBJ51的Datasheet PDF文件第3页浏览型号SMBJ51的Datasheet PDF文件第4页 
SMBJ Series  
Transient Voltage Suppressors  
Working Voltage: 5.0 to 440 V  
Peak Pulse Power: 600 W  
SMB/ DO-214AA  
Features  
˗
Glass passivated chip  
˗
600 W peak pulse power capability with a  
10/1000 ȝs waveform, repetitive rate (duty  
cycle):0.01 %  
˗
˗
˗
˗
˗
Low leakage  
Uni and Bidirectional unit  
Excellent clamping capability  
Very fast response time  
RoHS compliant  
Mechanical Data  
˗
˗
˗
Case: Molded plastic  
Epoxy: UL 94V-0 rate flame retardant  
Lead: Solderable per MIL-STD-750, method  
2026  
˗
˗
Polarity: Color band denotes cathode end  
except Bipolar  
Mounting position: Any  
Maximum Ratings(TA=25ɗ unless otherwise noted)  
Value  
600  
UNIT  
W
Parameter  
Symbol  
Peak power dissipation with a 10/1000ȝs waveform(1)  
PPP  
Peak pulse current wih a 10/1000ȝs waveform(1)  
Power dissipation on infinite heatsink at TL = 75 °C  
Peak forward surge current, 8.3 ms single half sine-  
IPP  
PD  
See Next Table  
5.0  
A
W
IFSM  
100  
A
wave unidirectional only(2)  
Maximum instantaneous forward voltage at 50 A for  
unidirectional only(3)  
VF  
3.5/5.0  
V
Operating junction and storage temperature range  
TJ, TSTG  
–55 to +150  
°C  
Note:  
(1)Non-repetitive current pulse per Fig.5 and derated above TA= 25 °C per Fig.1  
(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum  
(3)VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170301-P1  

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