Datasheet > SMBJ26AE3TR

SMBJ26AE3TR

更新时间： 2023-04-15 00:00:00

品牌	Logo	应用领域
美高森美 - MICROSEMI		电视
页数	文件大小	规格书
4页	176K
描述
600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2

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数据手册

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SMBJ26AE3TR 数据手册

SMBJ5.0 thru SMBJ170A, CA, e3

and SMBG5.0 thru SMBG170A, CA, e3

SURFACE MOUNT 600 Watt

Transient Voltage Suppressor

S C O T T S D A L E D I V I S I O N

GRAPHS

T_C= 25^oC

5.0

3.0

2.0

1.0

0.5

0.3

0.2

0.1

0.1 0.2

0.5 1.0 2.0

5.0 10

50 100 200

1000

10,000

Test waveform parameters: tr=10 μs, tw=1000 μs

FIGURE 2

tw – Pulse Width - μs

FIGURE 1

Peak Pulse Power vs. Pulse Time

Pulse Waveform for

Exponential Surge

PAD LAYOUT

SMBJ

INCHES

.260

.085

6.60

2.16

2.79

.110

SMBG

INCHES

0.320

0.085

8.13

2.16

2.79

T_LLead Temperature ^oC

V_(BR)- Breakdown Voltage – Volts

FIGURE 4

Typical Capacitance vs Breakdown Voltage

FIGURE 3 - Derating Curve

0.110

PACKAGE DIMENSIONS

MIN

MAX

.077 .160

.083 .180

.130 .205

.155 .220

.077

.104

.235

.255

.015

.030

.060

DIMENSIONS IN MILLIMETERS

MIN

MAX

1.96 4.06

2.10 4.57

3.30 5.21

3.94 5.59

1.95

2.65

5.97

6.48

.381

.762

.760

1.520

SA3-37, REV J, 5-24-2009

Microsemi

Page 4

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

1 2 34

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