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SMBJ188A PDF预览

SMBJ188A

更新时间: 2024-11-29 17:14:39
品牌 Logo 应用领域
友台半导体 - UMW 电视
页数 文件大小 规格书
4页 581K
描述
ESD/TVS 管

SMBJ188A 数据手册

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R
UMW  
UMW SMBJ5.0A(CA) THRU SMBJ188A(CA)  
5V-188V 600W  
FEATURES  
SMB(DO-214AA)  
Low profile package  
Cathode Band  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in uni-directional and bi-directional  
0.086(2.20)  
0.077(1.95)  
0.155(3.94)  
0.130(3.30)  
• 600 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate (duty  
cycle): 0.01 %  
0.180(4.57)  
0.160(4.06)  
• Excellent clamping capability  
• Very fast response time  
0.012(0.305)  
0.006(0.152)  
• Low incremental surge resistance  
0.096(2.44)  
0.084(2.13)  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3 or P/NHM3  
0.060(1.52)  
0.030(0.76)  
0.008(0.2)  
0(0)  
0.220(5.59)  
0.200(5.10)  
MECHANICAL DATA  
Case: SMB (DO-214AA)  
Dimensions in inches and (millimeters)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/N-M3 - halogen-free, RoHS-compliant, commercial  
grade  
Base P/NHE3 - RoHS-compliant and AEC-Q101 qualified  
PRIMARY CHARACTERISTICS  
Base P/NHM3  
- halogen-free, RoHS-compliant, and  
AEC-Q101 qualified  
VBR (bi-directional)  
6.4 V to 231 V  
6.4 V to 231 V  
5.0 V to 188 V  
600 W  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2  
whisker test  
VBR (uni-directional)  
VWM  
PPPM  
Polarity: for uni-directional types the band denotes cathode  
end, no marking on bi-directional types  
IFSM (uni-directional only)  
TJ max.  
100 A  
150 °C  
Polarity  
Uni-directional, bi-directional  
SMB (DO-214AA)  
Package  
DEVICES FOR BI-DIRECTION APPLICATIONS  
For bi-directional devices use CA suffix (e.g. SMBJ10CA).  
Electrical characteristics apply in both directions.  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VALUE  
600  
UNIT  
W
Peak pulse power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)  
Peak pulse current with a 10/1000 μs waveform (1)  
PPPM  
IPPM  
IFSM  
See next table  
100  
A
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)  
A
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal  
(2)  
www.umw-ic.com  
1
友台半导体有限公司  

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