Datasheet > SMBJ188-M3/5B

SMBJ188-M3/5B

更新时间： 2024-11-29 10:50:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	93K
描述
Trans Voltage Suppressor Diode, 600W, 188V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMB, 2 PIN

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SMBJ188-M3/5B 数据手册

New Product

SMBJ5.0 thru SMBJ188CA

Vishay General Semiconductor

Surface Mount TRANSZORB Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available in uni-directional and bi-directional

• 600 W peak pulse power capability with a 10/1000 μs

waveform, repetitive rate (duty cycle): 0.01 %

• Excellent clamping capability

DO-214AA (SMB J-Bend)

• Very fast response time

• Low incremental surge resistance

PRIMARY CHARACTERISTICS

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

V_WM

5.0 V to 188 V

P_PPM

600 W

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

_FSM(uni-directional only)

T_Jmax.

100 A

• Halogen-free according to IEC 61249-2-21 definition

150 °C

MECHANICAL DATA

Case: DO-214AA (SMBJ)

Molding compound meets UL 94 V-0 flammability rating

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, and telecommunication.

Base P/N-M3

- halogen-free, RoHS compliant, and

commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional use C or CA suffix (e.g. SMBJ10CA).

Electrical characteristics apply in both directions.

M3 suffix meets JESD 201 class 1A whisker test

Polarity: For uni-directional types the band denotes

cathode end, no marking on bi-directional types

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VALUE

600

UNIT

(1)(2)

Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1)

Peak pulse current with a 10/1000 μs waveform

P_PPM

(1)

I_PPM

See next table

100

(2)

Peak forward surge current 8.3 ms single half sine-wave uni-directional only

Operating junction and storage temperature range

I_FSM

T_J, T_STG

- 55 to + 150

°C

Notes

(1)

Non-repetitive current pulse, per fig. 3 and derated above T_A= 25 °C per fig. 2

Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal

(2)

Document Number: 89284

Revision: 20-Apr-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

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