SMBJ17CATR

更新时间： 2024-11-06 13:01:59

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
4页	202K
描述
600W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC PACKAGE-2

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SMBJ17CATR 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	DO-214AA	包装说明：	R-PDSO-C2
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.1	最大击穿电压：	20.9 V
最小击穿电压：	18.9 V	击穿电压标称值：	19.9 V
最大钳位电压：	27.6 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-214AA	JESD-30 代码：	R-PDSO-C2
JESD-609代码：	e0	湿度敏感等级：	1
最大非重复峰值反向功率耗散：	600 W	元件数量：	1
端子数量：	2	最高工作温度：	150 °C
最低工作温度：	-65 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	BIDIRECTIONAL
最大功率耗散：	1.38 W	认证状态：	Not Qualified
最大重复峰值反向电压：	17 V	子类别：	Transient Suppressors
表面贴装：	YES	技术：	AVALANCHE
端子面层：	Tin/Lead (Sn90Pb10)	端子形式：	C BEND
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

SMBJ17CATR 数据手册

SMBJ5.0 thru SMBJ170CA

and SMBG5.0 thru SMBG170CA

SURFACE MOUNT 600 Watt

Transient Voltage Suppressor

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This SMBJ5.0-170A or SMBG5.0-170A series of surface mount 600 W

Transient Voltage Suppressors (TVSs) protects a variety of voltage-sensitive

components from destruction or degradation. It is available in J-bend design

(SMBJ) with the DO-214AA package for greater PC board mounting density

or in a Gull-wing design (SMBG) in the DO-215AA for visible solder

connections. It is also available in both unidirectional and bidirectional

configurations with a C or CA suffix part number. Their response time is

virtually instantaneous. As a result, they can be used for protection from ESD

or EFT per IEC61000-4-2 and IEC61000-4-4, or for inductive switching

environments and induced RF protection. They can also protect from

secondary lightning effects per IEC61000-4-5 and class levels defined herein.

Microsemi also offers numerous other TVS products to meet higher and lower

NOTE: All SMB series are

equivalent to prior SMS package

identifications.

power demands and special applications.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Economical surface mount design in both J-bend or

•

Protects sensitive components such as IC’s, CMOS,

Bipolar, BiCMOS, ECL, DTL, T²L, etc.

Gull-wing terminations

•

Available in both unidirectional and bidirectional

construction (add C or CA suffix for bidirectional)

Selections for 5.0 to 170 volts standoff voltages (V_WM)

•

Protection from switching transients & induced RF

Compliant to IEC61000-4-2 and IEC61000-4-4 for

•

ESD and EFT protection respectively

Suppresses transients up to 600 watts @ 10/1000 µs

•

Secondary lightning protection per IEC61000-4-5

with 42 Ohms source impedance:

(see Figure 1)

•

Fast response

Class 1: SMB 5.0 to SMB 120A or CA

Class 2: SMB 5.0 to SMB 60A or CA

Class 3: SMB 5.0 to SMB 30A or CA

Class 4: SMB 5.0 to SMB 15A or CA

Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, JANTXV, and JANS are

available by adding MQ, MX, MV, or MSP prefixes

respectively to part numbers.

Axial-lead equivalent packages for thru-hole mounting

available as P6KE6.8 to P6KE200CA (consult factory

for other surface mount options)

Secondary lightning protection per IEC61000-4-5

•

with 12 Ohms source impedance:

Class 1: SMB 5.0 to SMB 36A or CA

Class 2: SMB 5.0 to SMB 18A or CA

Moisture classification is Level 1 with no dry pack

required per IPC/JEDEC J-STD-020B

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

• Peak Pulse Power dissipation at 25^ºC: 600 watts at

•

CASE: Void-free transfer molded thermosetting

10/1000 µs (also see Fig 1,2, and 3).

epoxy body meeting UL94V-0

• Impulse repetition rate (duty factor): 0.01%

•

TERMINALS: Gull-wing or C-bend (modified J-bend)

leads, tin-lead plated solderable per MIL-STD-750,

method 2026

• t_clamping(0 volts to V_(BR)min.): < 100 ps theoretical for

unidirectional and < 5 ns for bidirectional

• Operating and Storage temperature: -65^ºC to +150^ºC

•

POLARITY: Cathode indicated by band. No

marking on bi-directional devices

• Thermal resistance: 25 ^ºC/W junction to lead, or 90^ºC/W

junction to ambient when mounted on FR4 PC board

(1oz Cu) with recommended footprint (see last page)

MARKING: Part number without prefix (e.g. 5.0,

5.0A, 5.0CA, 36, 36A, 36CA, etc.)

TAPE & REEL option: Standard per EIA-481-1-A

with 12 mm tape, 750 per 7 inch reel or 2500 per 13

inch reel (add “TR” suffix to part number)

WEIGHT: 0.1 grams

See package dimension on last page

• Steady-State Power dissipation: 5 watts at T_L= 25^oC,

or 1.38 watts at T_A= 25^ºC when mounted on FR4 PC

board with recommended footprint

•

• Forward Surge at 25ºC: 50 Amps peak impulse of 8.3

ms half-sine wave (unidirectional only)

• Solder temperatures: 260 ^ºC for 10 s (maximum)

10-14-2003 REV C

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

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与SMBJ17CATR相关器件

型号	品牌	获取价格	描述	数据表
SMBJ17CE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 17V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
SMBJ17C-E3/52	VISHAY	获取价格	TVS DIODE 17V 30.5V DO214AA
SMBJ17C-E3/5B	VISHAY	获取价格	Trans Voltage Suppressor Diode, 17V V(RWM), Bidirectional,
SMBJ17CE3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 17V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
SMBJ17CE3/TR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 17V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
SMBJ17CHE3/52	VISHAY	获取价格	TVS DIODE 17V 30.5V DO214AA
SMBJ17CHE3/5B	VISHAY	获取价格	TVS DIODE 17V 30.5V DO214AA
SMBJ17C-M3/52	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 17V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
SMBJ17CP	MCC	获取价格	暂无描述
SMBJ17CT1	CRYDOM	获取价格	Trans Voltage Suppressor Diode, 600W, 17V V(RWM), Bidirectional, 1 Element, Silicon, DO-21

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