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SMBJ100A-E3 PDF预览

SMBJ100A-E3

更新时间： 2024-09-21 14:31:07
品牌 Logo 应用领域
威世 - VISHAY 局域网光电二极管电视
页数 文件大小 规格书
5页 89K
描述
DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Transient Suppressor

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SMBJ100A-E3 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：DO-214AA
包装说明：R-PDSO-C2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.06
Is Samacsys：N其他特性：UL RECOGNIZED
最大击穿电压：123 V最小击穿电压：111 V
击穿电压标称值：117 V最大钳位电压：162 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-214AA
JESD-30 代码：R-PDSO-C2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值反向功率耗散：600 W
元件数量：1端子数量：2
最高工作温度：150 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性：UNIDIRECTIONAL认证状态：Not Qualified
最大重复峰值反向电压：100 V子类别：Transient Suppressors
表面贴装：YES技术：AVALANCHE
端子面层：Matte Tin (Sn)端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：40
Base Number Matches：1

SMBJ100A-E3 数据手册

 浏览型号SMBJ100A-E3的Datasheet PDF文件第2页浏览型号SMBJ100A-E3的Datasheet PDF文件第3页浏览型号SMBJ100A-E3的Datasheet PDF文件第4页浏览型号SMBJ100A-E3的Datasheet PDF文件第5页 
SMBJ5.0A thru SMBJ188CA  
www.vishay.com  
Vishay General Semiconductor  
®
Surface Mount TRANSZORB Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in uni-directional and bi-directional  
• 600 W peak pulse power capability with a 10/1000 μs  
waveform, repetitive rate (duty cycle): 0.01 %  
• Excellent clamping capability  
DO-214AA (SMB J-Bend)  
• Very fast response time  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
PRIMARY CHARACTERISTICS  
VWM  
5.0 V to 188 V  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
PPPM  
600 W  
100 A  
I
FSM (uni-directional only)  
TJ max.  
150 °C  
MECHANICAL DATA  
Case: DO-214AA (SMBJ)  
Molding compound meets UL 94 V-0 flammability rating  
TYPICAL APPLICATIONS  
Base P/N-M3  
commercial grade  
- halogen-free, RoHS compliant, and  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, and telecommunication.  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test  
Polarity: For uni-directional types the band denotes  
cathode end, no marking on bi-directional types  
DEVICES FOR BI-DIRECTION APPLICATIONS  
For bi-directional use CA suffix (e.g. SMBJ10CA).  
Electrical characteristics apply in both directions.  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VALUE  
600  
UNIT  
W
(1)(2)  
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1)  
Peak pulse current with a 10/1000 μs waveform  
PPPM  
(1)  
IPPM  
See next table  
100  
A
(2)  
Peak forward surge current 8.3 ms single half sine-wave uni-directional only  
Operating junction and storage temperature range  
IFSM  
A
TJ, TSTG  
- 55 to + 150  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal  
(2)  
Revision: 14-Mar-12  
Document Number: 89284  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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SMBJ100A-E3 替代型号

型号 品牌 替代类型 描述 数据表
SMBJ100A-E3/52 VISHAY

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SMBJ100A BOURNS

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SMBJ100A FAIRCHILD

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SMBJ100A-E3/52 VISHAY

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 		DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ,
SMBJ100A-E3/5B VISHAY

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 		DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ,
SMBJ100AE3/TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 600W, 100V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBJ100AE3/TR13 MICROSEMI

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 		Trans Voltage Suppressor Diode, 600W, 100V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBJ100AE3/TR7 MICROSEMI

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 		Trans Voltage Suppressor Diode, 600W, 100V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBJ100AE3TR MICROSEMI

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 		600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2
SMBJ100A-G SENSITRON

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 		Trans Voltage Suppressor Diode, 600W, 100V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBJ100A-H YINT

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 		Automotive and High Reliability TVS Diodes
SMBJ100AHE3/52 VISHAY

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 		TVS DIODE 100V 162V DO214AA
SMBJ100AHE3/5B VISHAY

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 		TVS DIODE 100V 162V DO214AA

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