SMBGP6KE12

更新时间： 2024-11-22 03:18:03

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管瞬态抑制器
页数	文件大小	规格书
4页	222K
描述
Trans Voltage Suppressor Diode, 600W, 9.72V V(RWM), Unidirectional, 1 Element, Silicon, DO-215AA, PLASTIC, SMBG, 2 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SMBGP6KE12 数据手册

SMBJP6KE6.8 thru SMBJP6KE200CA, e3 and

SMBGP6KE6.8 thru SMBGP6KE200CA, e3

600 Watt TRANSIENT VOLTAGE

SUPPRESSOR

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This SMBJP6KE and SMBGP6KE series is an economical surface mount version of

the popular P6KE axial-leaded series of 600 W Transient Voltage Suppressors

(TVSs). It is available in both unidirectional and bi-directional configurations for

protecting voltage-sensitive components from destruction or degradation. Response

time of clamping action is virtually instantaneous. As a result, they may also be used

effectively for protection from ESD or EFT per IEC61000-4-2 and IEC61000-4-4 or for

inductive switching environments and induced RF. They can also be used for

protecting other sensitive components from secondary lightning effects per IEC61000-

4-5 and class levels defined herein. Microsemi also offers numerous other TVS

products to meet higher and lower power demands and special applications.

NOTE: All SMB series are

equivalent to prior SMS package

identifications.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Economical TVS series for surface mount

•

Suppresses transients up to 600 watts @ 10/1000

µs (see Figure 1)

Available in both unidirectional and bidirectional

(add C or CA suffix to part number for bidirectional)

•

Protects sensitive components such as IC’s,

CMOS, Bipolar, BiCMOS, ECL, DTL, T²L, etc.

•

Selections for 6.8 to 200 volts breakdown (V_BR

)

•

Protection from switching transients & induced RF

Fast response

Compliant to IEC61000-4-2 and IEC61000-4-4 for

ESD and EFT protection respectively

Optional 100% screening for avionics grade is

available by adding MA prefix to part number for added

100% temperature cycle -55^oC to +125^oC (10X) as well

as surge (3X) and 24 hours HTRB with post test V_Z&

I_R(in the operating direction for unidirectional or both

directions for bidirectional)

•

Secondary lightning protection per IEC61000-4-5

with 42 Ohms source impedance:

Class 1: SMBJ(G)P6KE6.8 to 130A or CA

Class 2: SMBJ(G)P6KE6.8 to 68A or CA

Class 3: SMBJ(G)P6KE6.8 to 36A or CA

Class 4: SMBJ(G)P6KE6.8 to 18A or CA

•

Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, and JANTXV are available by

adding MQ, MX, or MV prefixes respectively to part

numbers.

Secondary lightning protection per IEC61000-4-5

with 12 Ohms source impedance:

•

Axial-lead (thru-hole) equivalents available as P6KE6.8

to P6KE200CA (consult factory for other options)

Class 1: SMBJ(G)P6KE6.8 to 43A or CA

Class 2: SMBJ(G)P6KE6.8 to 22A or CA

Moisture classification is Level 1 with no dry pack

required per IPC/JEDEC J-STD-020B

RoHS Compliant devices available by adding an “e3”

suffix.

MAXIMUM RATINGS

• Peak Pulse Power dissipation at 25^oC: 600 watts at

10/1000 μs (also see Fig 1,2, and 3).

MECHANICAL AND PACKAGING

•

CASE: Void-free transfer molded thermosetting

epoxy body meeting UL94V-0

• Impulse repetition rate (duty factor): 0.01%

•

FINISH: Tin-Lead plated or RoHS Compliant

annealed matte-tin plating over copper and readily

solderable per MIL-STD-750, method 2026

• t_clamping(0 volts to V_(BR)min.): < 100 ps theoretical for

unidirectional and < 5 ns for bidirectional

• Operating and Storage temperature: -65^oC to +150^oC

MARKING: Body marked without SMBJ or SMBG

part number prefix, e.g. P6KE6.8A, P6KE6.8Ae3,

P6KE36, P6KE200CA, P6KE200CAe3, etc.

• Thermal resistance: 25 ^ºC/W junction to lead, or 90^ºC/W

junction to ambient when mounted on FR4 PC board (1oz

Cu) with recommended footprint (see last page)

•

POLARITY: Band denotes cathode. Bidirectional

not marked

• Steady-State Power dissipation: 5 watts at T_L= 25^oC, or

1.38 watts at T_A= 25^ºC when mounted on FR4 PC board

with recommended footprint

• Forward Voltage at 25^oC: 3.5 Volts maximum @ 50 Amp

peak impulse of 8.3 ms half-sine wave (unidirectional

only)

• Solder temperatures: 260^oC for 10 s (maximum)

WEIGHT: 0.1 grams (approximate)

•

TAPE & REEL option: Standard per EIA-481-1-A

with 12 mm tape, 750 per 7 inch reel or 2500 per

13 inch reel (add “TR” suffix to part number)

•

See package dimensions on last page

6-21-2007 Rev C

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

中文翻译

下载PDF

与SMBGP6KE12相关器件

型号	品牌	获取价格	描述	数据表
SMBGP6KE120	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 97.2V V(RWM), Unidirectional, 1 Element, Silicon, DO
SMBGP6KE120A	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 102V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBGP6KE120AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 102V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBGP6KE120AE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 102V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBGP6KE120ATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 102V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBGP6KE120C	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 97.2V V(RWM), Bidirectional, 1 Element, Silicon, DO-
SMBGP6KE120CATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 102V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
SMBGP6KE120CE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 97.2V V(RWM), Bidirectional, 1 Element, Silicon, DO-
SMBGP6KE120CE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 97.2V V(RWM), Bidirectional, 1 Element, Silicon, DO-
SMBGP6KE120CTR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 97.2V V(RWM), Bidirectional, 1 Element, Silicon, DO-

与SMBGP6KE12相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

31
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

22
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

51
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

50

产品中心

服务支持

精选活动

关于我们

帮助中心

SMBGP6KE12

SMBGP6KE12 数据手册

与SMBGP6KE12相关器件

与SMBGP6KE12相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SMBGP6KE12

SMBGP6KE12 数据手册

与SMBGP6KE12相关器件

与SMBGP6KE12相关文章

您还可以找

您在本页遇到什么问题？