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SMBGLCR80 PDF预览

SMBGLCR80

更新时间： 2024-11-21 20:08:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
2页 67K
描述
Trans Voltage Suppressor Diode, 1500W, 200V V(RWM), Unidirectional, 1 Element, Silicon, DO-215AA, PLASTIC PACKAGE-2

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SMBGLCR80 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active零件包装代码：DO-215AA
包装说明：R-PDSO-G2针数：2
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.74
最小击穿电压：220 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
最大正向电压 (VF)：7 VJEDEC-95代码：DO-215AA
JESD-30 代码：R-PDSO-G2JESD-609代码：e0
湿度敏感等级：1最大非重复峰值反向功率耗散：1500 W
元件数量：1端子数量：2
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
最大功率耗散：2.5 W认证状态：Not Qualified
最大重复峰值反向电压：200 V子类别：Rectifier Diodes
表面贴装：YES技术：AVALANCHE
端子面层：Tin/Lead (Sn90Pb10)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

SMBGLCR80 数据手册

 浏览型号SMBGLCR80的Datasheet PDF文件第2页 
SMBGLCR80, e3 and SMBJLCR80, e3  
LOW CAPACITANCE RECTIFIER  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
The SMBGLCR80 and SMBJLCR80 low capacitance rectifiers are used in parallel with a  
low-capacitance transient voltage suppressor (TVS) such as the SMCGLCE5.0-  
170A or SMCJLCE5.0-170A series for unidirectional applications as shown in  
Figure 4. It is rated with 100 Amp forward surges to compliment this 1500 Watt  
TVS series and also provide a low capacitance and a low forward (VF) voltage  
with fast response time. The low capacitance rating of 100 pF when used in  
parallel to the SMCGLCExxx or SMCJLCExxx series will result in a total  
capacitance of 200 pF or less at zero volts for protecting higher frequency  
applications from inductive switching threats or electrical systems involving  
secondary lightning effects per IEC61000-4-5 as well as RTCA/DO-160D or  
ARINC 429 for airborne avionics. With their fast response time, they also provide  
NOTE: All SMB series are  
equivalent to prior SMS package  
identifications.  
ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
•
Suppresses transient in forward direction up to 1500  
Watts Peak Pulse Power @ 10/1000 µs  
•
Low-capacitance Rectifier to compliment the low  
capacitance TVS series for unidirectional  
applications  
Economical small plastic surface mount with robust  
axial subassembly package  
•
•
•
Improved protection of low capacitance TVS  
Optional 100% screening for avionics grade is  
available by adding MA prefix to part number for added  
100% temperature cycle -55oC to +125oC (10X) as well  
as surge (3X) & 24 hours HTRB with post test VZ & IR  
Low Capacitance for data-line protection to 1 MHz  
Protection for aircraft fast data rate lines per select  
level waveforms in RTCA/DO-160D & ARINC 429  
with bit rates of 100 kb/s (per ARINC 429, Part 1,  
par. 2.4.1.1)  
•
Options for screening in accordance with MIL-PRF-  
19500 for JAN, JANTX, JANTXV, and JANS are also  
available by adding MQ, MX, MV, or MSP prefixes  
respectively to part number, e.g. MXSMCGLCR80,  
MVSMCJLCR80, etc.  
•
•
ESD and EFT protection per IEC61000-4-2 and  
IEC61000-4-4 respectively  
Secondary lightning protection per IEC61000-4-5  
with 12 and 42 Ohms source impedance in the  
forward direction for Class 1, 2, 3, and 4  
•
•
Also available in axial-leaded package with part  
number LCR80 or ELCR80 (see separate data sheet)  
RoHS Compliant devices available by adding “e3” suffix  
•
Secondary lightning protection per IEC61000-4-5  
with 2 Ohms source impedance in the forward  
direction for Class 2 and 3  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
CASE: Void-Free Transfer Molded Thermosetting Plastic  
epoxy body meeting UL94V-0  
•
Forward Peak Pulse Current at 25oC: 100 Amps @ 10/1000μs  
•
•
with repetition rate of 0.01% or less*  
Steady State Power Dissipation* at TL = +75oC: 2.5 Watts  
FINISH: All External Surfaces Are Corrosion Resistant  
and Leads Solderable  
•
•
Clamping Speed (0 volts to V(BR) Min.) less than 5  
nanoseconds  
Operating and Storage Temperature: -65oC to +150oC  
•
•
POLARITY: Cathode Marked with Band  
MARKING: Part number without SMBG or SMBJ prefix,  
e.g. LCR80 or LCR80e3  
•
•
WEIGHT: 0.1 Grams (Approx.)  
ELECTRICAL CHARACTERISTICS @ 25oC  
WORKING  
PEAK  
MINIMUM  
REVERSE  
REVERSE  
CURRENT  
@VRWM  
MAXIMUM  
FORWARD  
VOLTAGE  
@ IPP  
MAXIMUM  
PEAK PULSE CAPACITANCE  
CURRENT*  
RATING  
IPP  
MAXIMUM  
MICROSEMI PART  
NUMBER  
REVERSE  
VOLTAGE  
VRWM  
BREAKDOWN  
VOLTAGE  
@ 0 Volts  
V(BR) @ I(BR) 1.0mA  
IR  
VF  
Volts  
200  
Volts  
220  
Volts  
7.0  
Amps  
100  
pF  
100  
μA  
10  
SMBG(J)LCR80  
SMBG(J)LCR80e3  
*See Figure 3  
Copyright © 2005  
9-12-2005 REV A  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
12

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