Datasheet > SMAJP4KE27CE3TR

SMAJP4KE27CE3TR

更新时间： 2024-11-17 03:00:47

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
4页	305K
描述
Trans Voltage Suppressor Diode, 400W, 21.8V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AC, PLASTIC, DO-214BA, SMAJ, 2 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SMAJP4KE27CE3TR 数据手册

SMAJP4KE6.8 thru SMAJP4KE400CA, e3

TRANSIENT VOLTAGE SUPPRESSOR

S C O T T S D A L E D I V I S I O N

DESCRIPTION

PACKAGE

This Transient Voltage Suppressor (TVS) series is an economical molded

surface mount package with very low thermal resistance due to its unique

axial subassembly. It is used for automotive applications and others to

protect voltage sensitive components from destructive or partial degradation.

They have a peak pulse power rating of 400 watts for 1 ms as depicted in

Figures 1 and 2. The package is configured for easy pick and place onto PC

Boards for automated handling. The J-bend terminations also provide stress

relief for use on a variety of PC Board materials.

DO-214AC or BA

(SMAJ)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Economical series for surface mounting

•

Suppresses transient up to 400 watts @ 10/1000

μs (see Figure 1)

Protects sensitive components such as IC’s,

CMOS, Bipolar, BiCMOS, ECL, DTL, T²L, etc.

Available in both unidirectional and bi-directional (add

C or CA suffix to part number for bidirectional)

•

Voltages from 6.8 to 400 V Breakdown (V_BR

Fast Response

)

•

Protection from switching transients & induced RF

Compliant to IEC61000-4-2 and IEC61000-4-4 for

ESD and EFT protection respectively

Moisture classification is Level 1 per IPC/JEDEC

J-STD-020B with no dry pack

•

Secondary lightning protection per IEC61000-4-5

with 42 Ohms source impedance:

Class 1: SMAJP4KE6.8 to SMAJP4KE91A or CA

Class 2: SMAJP4KE6.8 to SMAJP4KE47A or CA

Class 3: SMAJP4KE6.8 to SMAJP4KE24A or CA

Class 4: SMAJP4KE6.8 to SMAJP4KE12A or CA

•

Optional 100% screening for avionics grade is

available by adding MA prefix to part number for

added 100% temperature cycle -55^oC to +125^oC

(10X) as well as surge (3X) and 24 hours HTRB with

post test V_Z& I_R(in the operating direction for

unidirectional or both directions for bidirectional)

•

Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, or JANTXV are available by

adding MQ, MX, or MV prefixes respectively to part

numbers

Secondary lightning protection per IEC61000-4-5

with 12 Ohms source impedance:

Class 1: SMAJP4KE6.8 to SMAJP4KE30A or CA

Class 2: SMAJP4KE6.8 to SMAJP4KE15A or CA

RoHS Compliant devices available by adding “e3” suffix

NOTE: Equivalent axial-leaded packages available

as P4KE6.8 to P4KE400CA

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Peak Pulse Power dissipation at 25^ºC: 400 watts at

•

CASE: Molded epoxy package meets UL94V-0

10/1000 μs (also see Fig 1,2, and 4)

TERMINALS: Tin-lead or RoHS compliant

annealed matte-Tin plating solderable per MIL-

STD-750, method 2026

•

Impulse repetition rate (duty factor): 0.01%

_clamping(0 volts to V_(BR)min.): < 100 ps theoretical for

unidirectional and < 5 ns for bidirectional

•

POLARITY: Cathode designated by cathode band

for unidirectional (none for bidirectional)

•

Operating and Storage temperature: -65^ºC to +150^ºC

Thermal resistance: 17 ^ºC/W junction to lead or

82^ºC/W junction to ambient when mounted on FR4

PC board (1 oz Cu) with recommended footprint (see

last page)

Steady-State Power dissipation: 5 watts at T_L= 65^oC

or 1.52 watts at T_A= 25^ºC when mounted on FR4 PC

board with recommended footprint

Marking only shows 4KExxx digits of part number

(e.g. 4KE6.8, 4KE12CA, 4KE30A, etc.)

•

Weight: 0.1 grams (approximate)

Tape & Reel option: Standard per EIA-481-1-A

with 12 mm tape (add “TR” suffix to part number)

750 per 7 inch reel or 2500 per 13 inch reel

•

Forward Surge Current at 25ºC: 40 amps peak, 8.3

ms half-sine wave. Maximum voltage of 3.50 V

(unidirectional only)

Solder temperatures: 260 ^ºC for 10 s (maximum)

6-20-2007 REV D

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

中文翻译

下载PDF

与SMAJP4KE27CE3TR相关器件

型号	品牌	获取价格	描述	数据表
SMAJP4KE27C-TP	MCC	获取价格	Trans Voltage Suppressor Diode
SMAJP4KE27C-TP-HF	MCC	获取价格	Trans Voltage Suppressor Diode
SMAJP4KE27CTR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 21.8V V(RWM), Bidirectional, 1 Element, Silicon, DO-
SMAJP4KE27E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 21.8V V(RWM), Unidirectional, 1 Element, Silicon, DO
SMAJP4KE27E3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 21.8V V(RWM), Unidirectional, 1 Element, Silicon, DO
SMAJP4KE27TRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 21.8V V(RWM), Unidirectional,
SMAJP4KE30	ETC	获取价格	Transient Voltage Suppressor
SMAJP4KE300	ETC	获取价格	Transient Voltage Suppressor
SMAJP4KE300A	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 256V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMAJP4KE300A	MCC	获取价格	Transient Voltage Suppressor 6.8 to 550 Volts 400 Watt

与SMAJP4KE27CE3TR相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

11
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

5
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

31
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

13

产品中心

服务支持

精选活动

关于我们

帮助中心

SMAJP4KE27CE3TR

SMAJP4KE27CE3TR 数据手册

与SMAJP4KE27CE3TR相关器件

与SMAJP4KE27CE3TR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SMAJP4KE27CE3TR

SMAJP4KE27CE3TR 数据手册

与SMAJP4KE27CE3TR相关器件

与SMAJP4KE27CE3TR相关文章

您还可以找

您在本页遇到什么问题？