Datasheet > SMAJP4KE170

SMAJP4KE170

更新时间： 2024-12-02 00:35:43

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
4页	331K
描述
Transient Voltage Suppressor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SMAJP4KE170 数据手册

SMAJP4KE6.8 thru SMAJP4KE400CA

Transient Voltage Suppressor

Breakdown Voltage 6.8 to 400 Volts

Peak Pulse Power

400 Watts

Features



Breakdown Voltages (V_BR)from 6.8 to 400V

CASE: SMA (DO214AC)

400W peak pulse power capability with a 10/1000μs

waveform, repetitive rate (duty cycle):0.01%

Fast Response Time



Low incremental surge resistance

Excellent clamping capability



Available in uni-directional and bi-directional

High temperature soldering guaranteed: 265℃ /10

seconds, 0.375” (9.5mm) lead length, 5lbs. (2.3kg)

tension

Application



Use in sensitive electronics protection against voltage

transients induced by inductive load switching and

lighting on IC_S, MOSFE, signal lines of sensor units for

consumer, computer, industrial, automotive and

telecommunication

Mechanical Data



Case: Void-free transfer molded thermosetting epoxy

body meeting UL94V-O



Terminals: Tin-Lead or ROHS Compliant annealed

matte-Tin plating readily solderable per MIL-STD-750,

Method 2026



Marking: Body marked with part number

Polarity: Cathode indicated by band. No marking on bi-

directional devices

Dimensions in inches and (millimeters)



Weight: 0.053g（Approximately）

Maximum Ratings and Electrical Characteristics @ 25^OC unless otherwise specified

Conditions

Symbol

Value

400

Unit

P_PPM

Peak pulse power capability with a 10/1000μs

Peak pulse current with a 10/1000μs

I_PPM

SEE TABLE1

5.0

Steady state power dissipation at T_L=65℃ ,Lead lengths 0.375”(10mm)

P_M(AV)

Steady state power dissipation at T_A=25℃ when mounted on FR4 PC

described for thermal resistance

1.52

I_FSM

V_F

Peak forward surge current,8.3ms single half sine-wave unidirectional only⑴

Maximum instantaneous forward voltage at 30A for unidirectional only⑵

Thermal resistance junction to lead

3.5/5.0

R_θJL

℃/W

℃

R_θJA

Thermal resistance junction to ambient

T_J,T_STG

Operating and Storage Temperature

-65 to +150

Notes:

⑴ Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum

⑵ V_F=3.5V for SMAJP4KE220(A) and below; V_F=5.0V for SMAJP4KE250(A) and above

Document Number: SMAJP4KE6.8 thru SMAJP4KE400CA

Feb.29, 2012

www.smsemi.com

12 3 4

中文翻译

下载PDF

与SMAJP4KE170相关器件

型号	品牌	获取价格	描述	数据表
SMAJP4KE170A	MCC	获取价格	Transient Voltage Suppressor 6.8 to 550 Volts 400 Watt
SMAJP4KE170A	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 145V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMAJP4KE170AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 145V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMAJP4KE170AE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 145V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMAJP4KE170AHE3	MCC	获取价格	Tape: 5K/Reel, 80K/Ctn;
SMAJP4KE170AP	MCC	获取价格	Trans Voltage Suppressor Diode, 400W, 145V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMAJP4KE170AQ	MCC	获取价格	Tape: 5K/Reel, 80K/Ctn;
SMAJP4KE170A-T	MCC	获取价格	暂无描述
SMAJP4KE170A-TP	MCC	获取价格	Trans Voltage Suppressor Diode, 400W, 145V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMAJP4KE170ATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 400W, 145V V(RWM), Unidirectional, 1 Element, Silicon, DO-

与SMAJP4KE170相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

53
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

42
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

70
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

66

产品中心

服务支持

精选活动

关于我们

帮助中心

SMAJP4KE170

SMAJP4KE170 数据手册

与SMAJP4KE170相关器件

与SMAJP4KE170相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SMAJP4KE170

SMAJP4KE170 数据手册

与SMAJP4KE170相关器件

与SMAJP4KE170相关文章

您还可以找

您在本页遇到什么问题？