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SMAJP4KE160A-TP PDF预览

SMAJP4KE160A-TP

更新时间: 2024-11-30 18:16:11
品牌 Logo 应用领域
美微科 - MCC 局域网光电二极管
页数 文件大小 规格书
5页 330K
描述
Trans Voltage Suppressor Diode, 400W, 136V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, SMAJ, 2 PIN

SMAJP4KE160A-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AC
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.22
其他特性:UL RECOGNIZED最大击穿电压:168 V
最小击穿电压:152 V击穿电压标称值:160 V
最大钳位电压:219 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:400 W元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
认证状态:Not Qualified最大重复峰值反向电压:136 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

SMAJP4KE160A-TP 数据手册

 浏览型号SMAJP4KE160A-TP的Datasheet PDF文件第2页浏览型号SMAJP4KE160A-TP的Datasheet PDF文件第3页浏览型号SMAJP4KE160A-TP的Datasheet PDF文件第4页浏览型号SMAJP4KE160A-TP的Datasheet PDF文件第5页 
SMAJP4KE6.8(C)A  
THRU  
SMAJP4KE550(C)A  
M C C  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
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TM  
Micro Commercial Components  
Features  
For surface mount applicationsin in order to optimize  
Transient  
Voltage Suppressor  
6.8 to 550 Volts  
boar d space  
Low profile package  
Fast response time: typical less than 1.0ps from 0 volts to  
400 Watt  
VBR minimum  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
DO-214AC  
UL Recognized File # E331408  
(SMAJ)(LEAD FRAME)  
Unidirectional and bidirectional available,for bidirectional  
devices add 'C' suffix to the pn#, i.e.SMAJP4KE6.8CA  
H
Mechanical Data  
J
CASE: JEDEC DO-214AC  
Terminals: solderable per MIL-STD-750, Method 2026  
Polarity: Color band denotespositive end (cathode)  
except Bidirectional  
Maximum soldering temperature: 260oC for 10 seconds  
Typical Thermal Resistance: 100 /W Junction to Ambient  
A
C
Maximum Ratings @ 25oC Unless Otherwise Specified  
E
D
B
F
Peak Pulse Current on  
10/1000us waveform  
IPP  
See Table 1 Note: 1  
G
Peak Pulse Power  
PPP  
400W  
Note: 1,  
DIMENSIONS  
Dissipation  
INCHES  
MIN  
.079  
.050  
.002  
---  
MM  
MIN  
2.00  
1.27  
.05  
-55oC to  
DIM  
A
MAX  
MAX  
2.44  
1.63  
.20  
NOTE  
Operation And Storage TJ, TSTG  
Temperature Range  
.096  
.064  
.008  
.02  
+175oC  
B
C
D
E
---  
.51  
.030  
.065  
.189  
.157  
.090  
.060  
.091  
.220  
.181  
.115  
.76  
1.52  
2.32  
5.59  
4.60  
2.92  
F
1.65  
4.80  
4.00  
2.25  
G
H
J
SUGGESTED SOLDER  
PAD LAYOUT  
0.090”  
0.085”  
NOTES:  
1. Non-repetitive current pulse, per Fig.3 and derated above  
TA=25oC per Fig.2.  
2. Mounted on 5.0mm2 copper pads to each terminal.  
0.070"  
www.mccsemi.com  
1 of 5  
Revision: F  
2013/07/18  

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