Datasheet > SMAJ8.0A-M3/5A

SMAJ8.0A-M3/5A

更新时间： 2024-11-23 22:42:31

品牌	Logo	应用领域
威世 - VISHAY		电视
页数	文件大小	规格书
6页	103K
描述
TVS DIODE 8V 13.6V DO214AC

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SMAJ8.0A-M3/5A 数据手册

SMAJ5.0A thru SMAJ188CA

www.vishay.com

Vishay General Semiconductor

Surface-Mount TRANSZORB Transient Voltage Suppressors

FEATURES

Available

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available in unidirectional and bidirectional

• 400 W peak pulse power capability with a

10/1000 μs waveform, repetitive rate (duty

cycle): 0.01 % (300 W above 78 V)

SMA (DO-214AC)

Available

Cathode

Anode

• Excellent clamping capability

• Very fast response time

(unidirectional)

(bidirectional)

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

LINKS TO ADDITIONAL RESOURCES

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHE3 or P/NHM3

3D Models

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

V_BRuni-directional

6.40 V to 231 V

MECHANICAL DATA

_BRbi-directional

6.40 V to 231 V

5.0 V to 188 V

400 W, 300 W

3.3 W

Case: SMA (DO-214AC)

V_WM

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/N-M3 - halogen-free, RoHS-compliant, commercial

grade

P_PPM

P_D

I_FSM

40 A

Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified

Base P/NHM3_X - halogen-free, RoHS-compliant, and

AEC-Q101 qualified

T_Jmax.

Polarity

Package

150 °C

Unidirectional, bidirectional

SMA (DO-214AC)

(“_X” denotes revision code e.g. A, B, ...)

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

DEVICES FOR BIDIRECTION APPLICATIONS

E3, M3, HE3, and HM3 suffix meets JESD 201 class 2

whisker test

For bidirectional use CA suffix (e.g. SMAJ10CA).

Electrical characteristics apply in both directions.

Polarity: for unidirectional types the band denotes cathode

end, no marking on bidirectional types

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, automotive, and telecommunication.

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

VALUE

400

UNIT

Peak pulse power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)

Peak pulse current with a waveform (1)

I_PPM

See next table

3.3

Power dissipation on infinite heatsink at T_A= 50 °C

Peak forward surge current 8.3 ms single half sine-wave unidirectional only (2)

Operating junction and storage temperature range

P_D

I_FSM

T_J, T_STG

-55 to +150

°C

Notes

(1)

Non-repetitive current pulse, per fig. 3 and derated above T_A= 25 °C per fig. 2. Rating is 300 W above 78 V

Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal

(2)

Revision: 30-Jun-2021

Document Number: 88390

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

中文翻译

下载PDF

与SMAJ8.0A-M3/5A相关器件

型号	品牌	获取价格	描述	数据表
SMAJ8.0A-M3/61	VISHAY	获取价格	DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, HALOGEN FREE AND ROHS COMPLIANT, SMA,
SMAJ8.0AQ	MCC	获取价格	Tape: 5K/Reel, 80K/Ctn;
SMAJ8.0AQ	YANGJIE	获取价格	SMA
SMAJ8.0A-Q1	ANBON	获取价格	SMA
SMAJ8.0A-T3	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 400W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
SMAJ8.0A-TP	MCC	获取价格	Trans Voltage Suppressor Diode, 400W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
SMAJ8.0ATR	ETC	获取价格	TVS DIODE 8V 13.6V SMA
SMAJ8.0C	UNIOHM	获取价格	SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS
SMAJ8.0C	SECOS	获取价格	400W Peak Power Surface Mount TVS
SMAJ8.0C	BYTESONIC	获取价格	SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS

与SMAJ8.0A-M3/5A相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

36
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

28
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

56
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

53

产品中心

服务支持

精选活动

关于我们

帮助中心

SMAJ8.0A-M3/5A

SMAJ8.0A-M3/5A 数据手册

与SMAJ8.0A-M3/5A相关器件

与SMAJ8.0A-M3/5A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SMAJ8.0A-M3/5A

SMAJ8.0A-M3/5A 数据手册

与SMAJ8.0A-M3/5A相关器件

与SMAJ8.0A-M3/5A相关文章

您还可以找

您在本页遇到什么问题？