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SMAJ78-M3/61

更新时间： 2024-11-23 14:38:31
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
6页 89K
描述
Trans Voltage Suppressor Diode, 78V V(RWM), Unidirectional,

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SMAJ78-M3/61 技术参数

是否Rohs认证： 符合生命周期：Obsolete
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.83
击穿电压标称值：96.35 V最大钳位电压：139 V
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE极性：UNIDIRECTIONAL
最大重复峰值反向电压：78 V子类别：Transient Suppressors
表面贴装：YESBase Number Matches：1

SMAJ78-M3/61 数据手册

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New Product  
SMAJ5.0 thru SMAJ188CA  
Vishay General Semiconductor  
®
Surface Mount TRANSZORB Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in uni-directional and bi-directional  
• 400 W peak pulse power capability with a 10/1000 μs  
waveform, repetitive rate (duty cycle): 0.01 % (300 W  
above 78 V)  
DO-214AC (SMA)  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
PRIMARY CHARACTERISTICS  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
VWM  
5.0 V to 188 V  
PPPM  
400 W, 300 W  
40 A  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
IFSM  
• Halogen-free according to IEC 61249-2-21 definition  
TJ max.  
150 °C  
TYPICAL APPLICATIONS  
MECHANICAL DATA  
Case: DO-214AC (SMA)  
Molding compound meets UL 94 V-0 flammability rating  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, and telecommunication.  
Base P/N-M3  
- halogen-free, RoHS compliant, and  
commercial grade  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
DEVICES FOR BI-DIRECTION APPLICATIONS  
M3 suffix meets JESD 201 class 1A whisker test  
For bi-directional use C or CA suffix (e.g. SMAJ10C,  
SMAJ10CA).  
Polarity: For uni-directional types the band denotes  
cathode end, no marking on bi-directional types  
Electrical characteristics apply in both directions.  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VALUE  
400  
UNIT  
W
(1)(2)  
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1)  
Peak pulse current with a waveform  
PPPM  
(1)  
IPPM  
See next table  
40  
A
(2)  
Peak forward surge current 8.3 ms single half sine-wave uni-directional only  
Operating junction and storage temperature range  
IFSM  
A
TJ, TSTG  
- 55 to + 150  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2, rating is 300 W above 78 V  
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal  
(2)  
Document Number: 89277  
Revision: 20-Apr-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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