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SMAJ30A-TR PDF预览

SMAJ30A-TR

更新时间: 2024-11-14 22:53:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 瞬态抑制器二极管光电二极管PC局域网
页数 文件大小 规格书
5页 92K
描述
TRANSILTM

SMAJ30A-TR 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:DO-214AC包装说明:R-PDSO-C2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
Factory Lead Time:17 weeks风险等级:1.12
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:179930Samacsys Pin Count:2
Samacsys Part Category:DiodeSamacsys Package Category:Diodes Moulded
Samacsys Footprint Name:SMASamacsys Released Date:2015-09-01 16:33:09
Is Samacsys:N其他特性:MOS COMPATIBLE
最小击穿电压:33.3 V最大钳位电压:64.3 V
配置:SINGLE最小二极管电容:480 pF
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:400 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:3.3 W认证状态:Not Qualified
最大重复峰值反向电压:30 V最大反向电流:1 µA
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SMAJ30A-TR 数据手册

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SMAJ5.0A-TR,CA-TR  
SMAJ188A-TR,CA-TR  
®
TRANSILTM  
FEATURES  
PEAK PULSE POWER : 400 W (10/1000µs)  
STAND OFF VOLTAGE RANGE :  
From 5V to 188V.  
UNI AND BIDIRECTIONAL TYPES  
LOW CLAMPING FACTOR  
FAST RESPONSE TIME  
JEDEC REGISTERED PACKAGE OUTLINE  
DESCRIPTION  
The SMAJ series are TRANSILTM diodes designed  
specifically for protecting sensitive equipment  
against transient overvoltages. The SMA package  
allows save spacing on high density printed circuit  
boards.  
SMA  
(JEDEC D0214 AC)  
Transil diodes provide high overvoltage protection  
by clamping action. Their instantaneous response  
to transient overvoltages makes them particularly  
suited to protect voltage sensitive devices such  
as MOS Technology and low voltage supplied  
IC’s.  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)  
Symbol  
PPP  
Parameter  
Peak pulse power dissipation (see note 1)  
Power dissipation on infinite heatsink  
Value  
400  
3.3  
Unit  
W
Tj initial = Tamb  
amb = 50°C  
P
T
W
IFSM  
Non repetitive surge peak forward  
current for unidirectional types  
tp = 10ms  
Tj initial = Tamb  
40  
A
Storage temperature range  
Maximum junction temperature  
Tstg  
Tj  
- 65 to + 175  
150  
°C  
°C  
TL  
Maximum lead temperature for soldering during 10 s.  
260  
°C  
Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.  
THERMAL RESISTANCES  
Symbol  
Rth (j-l)  
Parameter  
Value  
30  
Unit  
°C/W  
°C/W  
Junction to leads  
Rth (j-a)  
Junction to ambient on printed circuit on recommended pad  
layout  
120  
September 1998 Ed: 5A  
1/5  

SMAJ30A-TR 替代型号

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